Parasitic Capacitance in Nanosheet FETs: Extraction of Different Components and Their Analytical Modeling
A Singh, O Maheshwari… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This work presents an approach to extract and analytically model the components of the
parasitic capacitance in the Nanosheet FETs. The model comprehensively accounts for …
parasitic capacitance in the Nanosheet FETs. The model comprehensively accounts for …
Integration Challenges and Opportunities for Gate-All-Around FET (GAA FET) in Next-Generation Electronic Devices
In the rapidly advancing landscape of semiconductor technology, Gate-All-Around FET (GAA
FET) stands as a promising innovation poised to redefine the capabilities of next-generation …
FET) stands as a promising innovation poised to redefine the capabilities of next-generation …
Dissecting Parasitic Capacitance in Nanosheet FETs: An Analytical Perspective
A Singh, O Maheshwari… - 2024 8th IEEE Electron …, 2024 - ieeexplore.ieee.org
This work presents an approach to extract and analytically model the parasitic capacitance
components in Nanosheet FETs. Along with parallel and fringing components, the junction …
components in Nanosheet FETs. Along with parallel and fringing components, the junction …