Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

M Napari, TN Huq, RLZ Hoye, JL MacManus‐Driscoll - InfoMat, 2021 - Wiley Online Library
Nickel oxide (NiO x), ap‐type oxide semiconductor, has gained significant attention due to its
versatile and tunable properties. It has become one of the critical materials in wide range of …

2p x-ray absorption spectroscopy of 3d transition metal systems

FMF de Groot, H Elnaggar, F Frati, R Wang… - Journal of Electron …, 2021 - Elsevier
This review provides an overview of the different methods and computer codes that are used
to interpret 2p x-ray absorption spectra of 3d transition metal ions. We first introduce the …

Main and satellite features in the Ni 2p XPS of NiO

PS Bagus, CJ Nelin, CR Brundle, BV Crist… - Inorganic …, 2022 - ACS Publications
The origin and assignment of the complex main and satellite X-ray photoelectron
spectroscopy (XPS) features of the cations in ionic compounds have been the subject of …

Comparison of nanoscaled and bulk NiO structural and environmental characteristics by XRD, XAFS, and XPS

MA Peck, MA Langell - Chemistry of Materials, 2012 - ACS Publications
NiO has been analyzed by X-ray diffraction (XRD), X-ray absorption fine structure (XAFS)
analysis, and X-ray photoelectron spectroscopy (XPS) for bulk-scale and nanosized …

Multiorbital Processes Rule the Normal State

F Lechermann - Physical Review X, 2020 - APS
The predominant Ni-multiorbital nature of infinite-layer neodynium nickelate at stoichiometry
and with doping is revealed. We investigate the correlated electronic structure of NdNiO 2 at …

High-temperature superconductivity in La3Ni2O7

K Jiang, Z Wang, FC Zhang - Chinese Physics Letters, 2024 - iopscience.iop.org
Motivated by the recent discovery of high-temperature superconductivity in bilayer La 3 Ni 2
O 7 under pressure, we study its electronic properties and superconductivity due to strong …

Electronic and transport properties of Li-doped NiO epitaxial thin films

JY Zhang, WW Li, RLZ Hoye… - Journal of Materials …, 2018 - pubs.rsc.org
NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging
from solar cells to transparent transistors. Understanding and improving its optical and …

Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p–n Heterojunction

J Zhang, S Han, M Cui, X Xu, W Li, H Xu… - ACS Applied …, 2020 - ACS Publications
Ga2O3 is emerging as an interesting semiconductor for high-power electronics and solar-
blind ultraviolet photodetectors because of its ultrawide bandgap and high breakdown field …

Understanding the Enhancement Mechanism of A-Site-Deficient LaxNiO3 as an Oxygen Redox Catalyst

Y Qiu, R Gao, W Yang, L Huang, Q Mao… - Chemistry of …, 2020 - ACS Publications
Lanthanide perovskite oxides have attracted much attention as an oxygen reduction and
evolution catalyst because of their high chemical stability and composition adjustability. A …

Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations

KO Egbo, CP Liu, CE Ekuma, KM Yu - Journal of Applied Physics, 2020 - pubs.aip.org
Native defects in semiconductors play an important role in their optoelectronic properties.
Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its …