A Fin-Gate p-GaN HEMT with High Threshold Voltage and Improved Dynamic Performance
L Shen, X Zhou, Z Li, X Cheng - Microelectronics Journal, 2024 - Elsevier
A novel fin-gate p-GaN (FPG) HEMT is proposed to simultaneously increase threshold
voltage (V th) and improve dynamic performance of the p-GaN HEMT. The fin-gate structure …
voltage (V th) and improve dynamic performance of the p-GaN HEMT. The fin-gate structure …
DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate
M Jagadesh, A Karthikeyan, D Somasundaram - Microelectronics Journal, 2024 - Elsevier
Scandium aluminum nitride (Sc x Al 1-x N) is a promising material among group III nitrides,
offering outstanding polarization properties resulting in very large carrier densities. We …
offering outstanding polarization properties resulting in very large carrier densities. We …