Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate
The development of an efficient group-IV light source that is compatible with the CMOS
process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been …
process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been …
On-chip optical interconnection using integrated germanium light emitters and photodetectors
K Tani, T Okumura, K Oda, M Deura, T Ido - Optics Express, 2021 - opg.optica.org
Germanium (Ge) is an attractive material for monolithic light sources and photodetectors, but
it is not easy to integrate Ge light sources and photodetectors because their optimum device …
it is not easy to integrate Ge light sources and photodetectors because their optimum device …
Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging
L Yao, R Ji, S Wu, J Jiao, F He, D Wang… - Journal of Physics D …, 2024 - iopscience.iop.org
High-performance germanium (Ge) lateral PIN photodetector (PD) arrays for short wave
infrared (SWIR) imaging based on Ge-on-insulator (GOI) platform was proposed and …
infrared (SWIR) imaging based on Ge-on-insulator (GOI) platform was proposed and …
Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improved responsivity and specific detectivity at 1,550 nm
Gourd-shaped hole array germanium (Ge) vertical pin photodiodes were designed and
demonstrated on a germanium-on-insulator (GOI) substrate with the excellent responsivity of …
demonstrated on a germanium-on-insulator (GOI) substrate with the excellent responsivity of …
PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by a recessed SiN x stressor
Mechanical strain engineering has been promising for many integrated photonic
applications. However, for the engineering of a material electronic bandgap, a trade-off …
applications. However, for the engineering of a material electronic bandgap, a trade-off …
[HTML][HTML] High performance germanium on silicon photodiodes for back-end-of-line photonic integration
Integration of near-infrared photodetectors in the back-end-of-line requires low temperature
growth of Ge (< 450 C). We have fabricated high performance, vertical incidence Ge-on-Si …
growth of Ge (< 450 C). We have fabricated high performance, vertical incidence Ge-on-Si …
Low Dark Current and High Speed InGaAs Photodiode on CMOS-Compatible Silicon by Heteroepitaxy
Top-illuminated proof-of-concept indium gallium arsenide (InGaAs) photodiode (PD) array
and high speed InGaAs PDs were realized on (001) silicon (Si) substrate by direct …
and high speed InGaAs PDs were realized on (001) silicon (Si) substrate by direct …
Enhanced light emission of germanium light-emitting-diode on 150 mm germanium-on-insulator (GOI)
Germanium-on-insulator (GOI) has emerged as a novel platform for Ge-based electronic and
photonic applications. Discrete photonic devices, such as waveguides, photodetectors …
photonic applications. Discrete photonic devices, such as waveguides, photodetectors …
Ge₀. ₉₂Sn₀. ₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate
The development of an efficient group-IV light source that is compatible with the CMOS
process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been …
process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been …
Ultralow Dark Current Small-Sized Germanium Photodetectors With a Self-Forming Guard Ring Structure
L Yao, Z Zhou, Y Zhu, Y Rao, Y Hu, C Li… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The small-sized germanium (Ge) lateral photodetectors (PDs) with a ultralow dark current of
1.77 nA under− 1 V at room temperature were first realized by implementing a self-forming …
1.77 nA under− 1 V at room temperature were first realized by implementing a self-forming …