An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of
crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of …

A memory including memory cells having active and passive layers may store multiple
information bits. The active layer may include an organic polymer that has a variable …

US8183665B2 - Nonvolatile nanotube diodes and nonvolatile nanotube blocks and
systems using same and methods of making same - Google Patents US8183665B2 …

A memory device with multi-bit memory cells and method of making the same uses self-
assembly to provide polymer memory cells on the contacts to a transistor array. Employing …

Sive layerS may store multiple information bits. The active 3,719,933 A 3/1973 Wakabayashi
et al. layer may include an organic polymer that has a variable 3.810, 127 A 5/1974 Hoff, Jr …

A non-volatile latch circuit is provided. The non-volatile latch circuit includes a nanotube
switching element capable of switching between resistance states and non-volatilely …

A two terminal switching device includes first and second conductive terminals and a
nanotube article. The article has at least one nanotube, and overlaps at least a portion of …

A memory storage and retrieval device containing (a) an electrically conductive first
electrode;(b) an electrically conductive second electrode; and (c) a layer stack intermediate …

Meinhold, Arlington, MA (US) US PATENT DOCUMENTS (73) Assignee: Nantero Inc.,
Woburn, MA (US) 3,922,648 A* 1 1/1975 Buckley 365,163 (*) Notice: Subject to any …

Computational Multiscale Modeling of Multiphase Nanosystems: Theory and Applications
presents a systematic description of the theory of multiscale modeling of nanotechnology …