Defect identification in semiconductors with positron annihilation:<? format?> Experiment and theory

F Tuomisto, I Makkonen - Reviews of Modern Physics, 2013 - APS
Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

[HTML][HTML] Diffusion of n-type dopants in germanium

A Chroneos, H Bracht - Applied Physics Reviews, 2014 - pubs.aip.org
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Oxygen defect processes in silicon and silicon germanium

A Chroneos, EN Sgourou, CA Londos… - Applied Physics …, 2015 - pubs.aip.org
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

A near-wearless and extremely long lifetime amorphous carbon film under high vacuum

L Wang, R Zhang, U Jansson, N Nedfors - Scientific reports, 2015 - nature.com
Prolonging wear life of amorphous carbon films under vacuum was an enormous challenge.
In this work, we firstly reported that amorphous carbon film as a lubricant layer containing …

Fluorine effect on As diffusion in Ge

G Impellizzeri, S Boninelli, F Priolo… - Journal of Applied …, 2011 - pubs.aip.org
The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the
realization of ultrahigh doped regions in miniaturized germanium (Ge) based devices. In this …

Fluorine codoping in germanium to suppress donor diffusion and deactivation

A Chroneos, RW Grimes, H Bracht - Journal of Applied Physics, 2009 - pubs.aip.org
Electronic structure calculations are used to investigate the stability of fluorine-vacancy (F n
V m) clusters in germanium (Ge). Using mass action analysis, it is predicted that the F n V m …

Microscopic models for uphill diffusion

M Colangeli, A De Masi, E Presutti - Journal of Physics A …, 2017 - iopscience.iop.org
We study a system of particles which jump on the sites of the interval $[1, L] $ of ${\mathbb Z}
$. The density at the boundaries is kept fixed to simulate the action of mass reservoirs. The …

Diffusion and dopant activation in germanium: Insights from recent experimental and theoretical results

EN Sgourou, Y Panayiotatos, RV Vovk, N Kuganathan… - Applied Sciences, 2019 - mdpi.com
Germanium is an important mainstream material for many nanoelectronic and sensor
applications. The understanding of diffusion at an atomic level is important for fundamental …

Vacancy-oxygen defects in silicon: the impact of isovalent doping

CA Londos, EN Sgourou, D Hall… - Journal of Materials …, 2014 - Springer
Silicon is the mainstream material for many nanoelectronic and photovoltaic applications.
The understanding of oxygen related defects at a fundamental level is essential to further …

Toward defect engineering strategies to optimize energy and electronic materials

EN Sgourou, Y Panayiotatos, RV Vovk, A Chroneos - Applied Sciences, 2017 - mdpi.com
The technological requirement to optimize materials for energy and electronic materials has
led to the use of defect engineering strategies. These strategies take advantage of the …