Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …
attention due to their enhanced properties such as fast operation speed, simple device …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH 3 NH 3 PbI 3− x Cl x/FTO structure
Organolead halide perovskite materials open up a new era for developing low-cost and high
efficiency solar cells due to their simple and inexpensive fabrication process, superior light …
efficiency solar cells due to their simple and inexpensive fabrication process, superior light …
Impact of defect distribution on resistive switching characteristics of Sr2TiO4 thin films
K Shibuya, R Dittmann, S Mi, R Waser - Advanced materials, 2010 - elibrary.ru
(Figure Presented) The resistive switching properties of Sr 2 TiO 4 thin films with specific
defect distribution have been studied. Junctions of Sr 2 TiO 4 thin films containing a high …
defect distribution have been studied. Junctions of Sr 2 TiO 4 thin films containing a high …
High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
We demonstrate a high-performance selection device by utilizing the concept of crested
oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO …
oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO …
Structural Phase Transition Effect on Resistive Switching Behavior of MoS2‐Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices
P Zhang, C Gao, B Xu, L Qi, C Jiang, M Gao, D Xue - Small, 2016 - Wiley Online Library
The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2)
nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 …
nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 …
Flexible organic memory devices with multilayer graphene electrodes
We fabricated 8× 8 cross-bar array-type flexible organic resistive memory devices with
transparent multilayer graphene (MLG) electrodes on a poly (ethylene terephthalate) …
transparent multilayer graphene (MLG) electrodes on a poly (ethylene terephthalate) …
In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface
The interface-type resistive switching devices exhibiting bipolar and multi-level resistive
switching have been considered as the key component for neuromorphic device …
switching have been considered as the key component for neuromorphic device …
Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
Anja Herpers, Christian Lenser, Chanwoo Park, Francesco Offi, Francesco Borgatti,
Giancarlo Panaccione, Stephan Menzel, Rainer Waser, and Regina Dittmann* switching. As …
Giancarlo Panaccione, Stephan Menzel, Rainer Waser, and Regina Dittmann* switching. As …
Categorization of resistive switching of metal-Pr0. 7Ca0. 3MnO3-metal devices
Resistive switching (RS) characteristics of a Pr 0.7 Ca 0.3 MnO 3 (PCMO) film sandwiched
between a Pt bottom electrode and top electrodes (TE) made of various metals are found to …
between a Pt bottom electrode and top electrodes (TE) made of various metals are found to …