Structural, optical and dispersion characteristics of nanocrystalline GaN films prepared by MOVPE
MM El-Nahass, AAM Farag - Optics & Laser Technology, 2012 - Elsevier
In this work, nanocrystalline GaN film was grown on a c-plane sapphire substrate by metal-
organic vapor phase epitaxy (MOVPE). The structural and optical properties of the …
organic vapor phase epitaxy (MOVPE). The structural and optical properties of the …
Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics
Room-temperature luminescence properties of a dense electron-hole plasma were studied
in a set of GaN epilayers with thickness varying from 2 to 25 µm. The stimulated emission …
in a set of GaN epilayers with thickness varying from 2 to 25 µm. The stimulated emission …
Physics, MOVPE growth and investigation of m-plane GaN films and InGaN/GaN quantum wells on {gamma}-LiAlO {sub 2} substrates
C Mauder - 2011 - osti.gov
The growth of InGaN/GaN quantum well structures along a nonpolar orientation avoids the
negative effects of the so-called''Quantum Confined Stark Effect''and is therefore considered …
negative effects of the so-called''Quantum Confined Stark Effect''and is therefore considered …