Graphene nanoribbon field effect transistors analysis and applications
The dimension down scaling capability of the silicon based transistors has produced
significant developments in the electronic industry. The channel length reduction has been …
significant developments in the electronic industry. The channel length reduction has been …
Novel electrical properties and applications in kaleidoscopic graphene nanoribbons
W Bo, Y Zou, J Wang - RSC advances, 2021 - pubs.rsc.org
As one of the representatives of nano-graphene materials, graphene nanoribbons (GNRs)
have more novel electrical properties, highly adjustable electronic properties, and …
have more novel electrical properties, highly adjustable electronic properties, and …
2D honeycomb silicon: A review on theoretical advances for silicene field-effect transistors
Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional
(2D) semiconductor materials are successively an active area of research. Silicene is a …
(2D) semiconductor materials are successively an active area of research. Silicene is a …
Scaling effects on static metrics and switching attributes of graphene nanoribbon FET for emerging technology
YM Banadaki, A Srivastava - IEEE Transactions on Emerging …, 2015 - ieeexplore.ieee.org
In this paper, we have investigated the static metrics and switching attributes of graphene
nanoribbon field-effect transistors (GNR FETs) for scaling the channel length from 15 nm …
nanoribbon field-effect transistors (GNR FETs) for scaling the channel length from 15 nm …
Improving the performance of graphene nanoribbon field-effect transistors by using lanthanum aluminate as the gate dielectric
In nanoscale transistors, electron tunneling increases and causes a large leakage current
due to the reduced channel length and gate oxide thickness. To reduce the short-channel …
due to the reduced channel length and gate oxide thickness. To reduce the short-channel …
Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr
Many doping methods can affect graphene's electronic properties, but several of them
disrupt the underlying structure and lower the electrical mobility of graphene. As a result …
disrupt the underlying structure and lower the electrical mobility of graphene. As a result …
Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model
YM Banadaki, A Srivastava - Solid-State Electronics, 2015 - Elsevier
The performance of graphene nanoribbon field effect transistor (GNR FET) is investigated
from a numerical model based on self-consistent non-equilibrium Green's Function (NEGF) …
from a numerical model based on self-consistent non-equilibrium Green's Function (NEGF) …
Enhanced Device and Circuit‐Level Performance Benchmarking of Graphene Nanoribbon Field‐Effect Transistor against a Nano‐MOSFET with Interconnects
HC Chin, CS Lim, WS Wong… - Journal of …, 2014 - Wiley Online Library
Comparative benchmarking of a graphene nanoribbon field‐effect transistor (GNRFET) and
a nanoscale metal‐oxide‐semiconductor field‐effect transistor (nano‐MOSFET) for …
a nanoscale metal‐oxide‐semiconductor field‐effect transistor (nano‐MOSFET) for …
Material properties analysis of graphene base transistor (GBT) for VLSI analog circuits design
GP Singh, BS Sohi, B Raj - 2017 - nopr.niscpr.res.in
Graphene base transistor's (GBT) analysis has been reviewed in this paper. This study has
been focused on work carried out by other authors for GBT physics. Here prominence has …
been focused on work carried out by other authors for GBT physics. Here prominence has …
Ab-initio investigation on aluminum nitride nanoribbons for reconfigurable logic gates
The paper investigates density functional theory (DFT) to examine F-functionalized zigzag
aluminum nitride nanoribbons (ZAlNNR). The metallic behavior is present in the H-ZAlNNR …
aluminum nitride nanoribbons (ZAlNNR). The metallic behavior is present in the H-ZAlNNR …