Parasitic capacitive couplings in medium voltage power electronic systems: An overview
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …
devices are drawing attention from both researchers and industries due to the demanding …
10-kV SiC MOSFET power module with reduced common-mode noise and electric field
CM DiMarino, B Mouawad, CM Johnson… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
Impact of power module parasitic capacitances on medium-voltage SiC MOSFETs switching transients
DN Dalal, N Christensen, AB Jørgensen… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant
magnitude of the displacement currents through power module parasitic capacitances that …
magnitude of the displacement currents through power module parasitic capacitances that …
Design and experimental validation of a wire-bond-less 10-kV SiC MOSFET power module
C DiMarino, B Mouawad, CM Johnson… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the
potential to revolutionize medium-and high-voltage systems due to their high-speed …
potential to revolutionize medium-and high-voltage systems due to their high-speed …
Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources
This article provides an overview of power semiconductor devices (PSDs) for the distributed
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …
Improved packaging of power module with low-permittivity material for low common-mode noise and high reliability
S Choi, J Choi, T Warnakulasooriya… - … on Power Electronics, 2024 - ieeexplore.ieee.org
This article proposes a novel power module configuration which replaces a part of the
bottom copper layer of a direct-bonded copper by low-permittivity (low-ϵ) epoxy. The …
bottom copper layer of a direct-bonded copper by low-permittivity (low-ϵ) epoxy. The …
A novel approach to partial discharge detection under repetitive unipolar impulsive voltage
H Wang, G Xiao, L Wang, Y Pei, F Yan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Partial discharge (PD) detection is an important method to verify the reliability of the
insulation structure of high-voltage power electronics devices. Although there are many …
insulation structure of high-voltage power electronics devices. Although there are many …
Desired properties of a nonlinear resistive coating for shielding triple point in a medium-voltage power module
This work explores a nonlinear resistive field-grading material to shield the triple points prior
to silicone encapsulation, thus, increasing the power module's partial discharge inception …
to silicone encapsulation, thus, increasing the power module's partial discharge inception …
Stacked DBC cavitied substrate for a 15-kV half-bridge power module
High-voltage (3.3-10 kV) SiC power switching devices are on the verge of
commercialization, while devices rated 15 kV and above are expected in the future …
commercialization, while devices rated 15 kV and above are expected in the future …
Discovery of Loss Imbalance in SiC Half-Bridge Power Modules–Analysis and Validations
It is commonly assumed that power semiconductor switching losses are the same for high-
side and low-side devices in a half-bridge power module. However, this article reveals that …
side and low-side devices in a half-bridge power module. However, this article reveals that …