(57) ABSTRACT A semiconductor device includes a fin structure, first and second gate
structures, a source/drain region, a source/drain contact, a separator, a plug contacting the …

US9818651B2 - Methods, apparatus and system for a passthrough-based architecture -
Google Patents US9818651B2 - Methods, apparatus and system for a passthrough-based …

Device structures and fabrication methods for a field-effect transistor. A first dielectric spacer
adjacent to a sidewall of a gate placeholder structure. A contact placeholder structure is …

The invention provides a method of forming a semiconduc tor structure, which include:
providing an intermediate semi conductor structure having semiconductor substrate, a fin …

(57) ABSTRACT A manufacturing method of a conductive structure in a semi conductor
device includes the following steps. A plurality of gate structures are formed on a …

A semiconductor device and a method for fabricating the semiconductor device are
provided. In the method for fabricating the semiconductor device, at first, a FinFET (Field …

The present disclosure generally relates to semiconductor structures and, more particularly,
to middle of line structures and methods of manufacture. The structure includes: a plurality of …

(57) ABSTRACT A semiconductor device includes a first gate structure dis posed on a
substrate. The first gate structure includes a first gate electrode, a first cap insulating layer …

(57) ABSTRACT A method of forming a semiconductor structure includes forming a first
middle-of-line (MOL) oxide layer and a second MOL oxide layer in the semiconductor …

A semiconductor device includes a fin structure, first and second gate structures, a
source/drain region, a source/drain contact, a separator, a plug contacting the source/drain …