Materials quest for advanced interconnect metallization in integrated circuits
Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …
improvements while increasing the cost and complexity of the technology with each …
Accounting for the resistivity contribution of grain boundaries in metals: critical analysis of reported experimental and theoretical data for Ni and Cu
I Bakonyi - The European Physical Journal Plus, 2021 - epjplus.epj.org
In the present paper, reported literature data on the grain-size dependence of resistivity of Ni
and Cu are critically evaluated by two conceptually different methods. One is the …
and Cu are critically evaluated by two conceptually different methods. One is the …
Understanding grain boundary electrical resistivity in Cu: the effect of boundary structure
Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct
atomic arrangement compared to the grain interior. While the GB structure has a crucial …
atomic arrangement compared to the grain interior. While the GB structure has a crucial …
Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors
H Carrillo-Nuñez, N Dimitrova… - IEEE Electron …, 2019 - ieeexplore.ieee.org
This letter investigates the possibility to replace numerical TCAD device simulations with a
multi-layer neural network (NN). We explore if it is possible to train the NN with the required …
multi-layer neural network (NN). We explore if it is possible to train the NN with the required …
Non-ohmic behavior and resistive switching of Au cluster-assembled films beyond the percolation threshold
Networks based on nanoscale resistive switching junctions are considered promising for the
fabrication of neuromorphic computing architectures. To date random networks of …
fabrication of neuromorphic computing architectures. To date random networks of …
[HTML][HTML] First-principles prediction of electron grain boundary scattering in fcc metals
The electron reflection probability r at symmetric twin boundaries Σ3, Σ5, Σ9, and Σ11 is
predicted from first principles for the eight most conductive face-centered cubic (fcc) metals. r …
predicted from first principles for the eight most conductive face-centered cubic (fcc) metals. r …
Approaches to measure the resistivity of grain boundaries in metals with high sensitivity and spatial resolution: a case study employing Cu
It is well-known that grain boundaries (GBs) increase the electrical resistivity of metals due to
their enhanced electron scattering. The resistivity values of GBs are determined by their …
their enhanced electron scattering. The resistivity values of GBs are determined by their …
Electrical conduction in nanogranular cluster-assembled metallic films
M Mirigliano, P Milani - Advances in Physics: X, 2021 - Taylor & Francis
ABSTRACT A film fabricated by the assembling of nanoparticles that retain, at least partially,
their individuality is expected to show substantially different structural and functional …
their individuality is expected to show substantially different structural and functional …
Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films
M Mirigliano, S Radice, A Falqui, A Casu, F Cavaliere… - Scientific reports, 2020 - nature.com
We report the observation of non-metallic electrical conduction, resistive switching, and a
negative temperature coefficient of resistance in nanostructured gold films above the …
negative temperature coefficient of resistance in nanostructured gold films above the …
Influence of the nanostructure on the electric transport properties of resistive switching cluster-assembled gold films
The use of Au clusters produced in the gas phase and deposited at low kinetic energy on a
substrate allows the bottom-up fabrication of nanostructured metallic thin films with an …
substrate allows the bottom-up fabrication of nanostructured metallic thin films with an …