Direct detectors and their applications in electron microscopy for materials science
BDA Levin - Journal of Physics: Materials, 2021 - iopscience.iop.org
The past decade has seen rapid advances in direct detector technology for electron
microscopy. Direct detectors are now having an impact on a number of techniques in …
microscopy. Direct detectors are now having an impact on a number of techniques in …
Universal damage factor for radiation-induced dark current in silicon devices
JR Srour, DH Lo - IEEE Transactions on Nuclear Science, 2000 - ieeexplore.ieee.org
A new damage factor formulation is presented for describing radiation-induced dark current
in silicon devices. This damage factor, K/sub dark/, is the number of carriers thermally …
in silicon devices. This damage factor, K/sub dark/, is the number of carriers thermally …
Determination of in situ trap properties in CCDs using a “single-trap pumping” technique
The science goals of space missions from the Hubble Space Telescope through to Gaia and
Euclid require ultraprecise positional, photometric, and shape measurement information …
Euclid require ultraprecise positional, photometric, and shape measurement information …
Dark Current and Clock-Induced Charges in a Fully Depleted Charge Domain CDTI based CCD-on-CMOS Image Sensor
AS Alj, P Touron, F Roy, A Tournier… - IEEE Sensors …, 2024 - ieeexplore.ieee.org
The charge-coupled device (CCD) is an essential image sensor for spaceborne scientific
applications, high-resolution Earth observation, and low-light imaging due its charge transfer …
applications, high-resolution Earth observation, and low-light imaging due its charge transfer …
连续激光与单脉冲纳秒激光对CMOS 的损伤效应
王昂， 郭锋， 朱志武， 许中杰， 程湘爱 - 强激光与粒子束, 2014 - cpsjournals.cn
针对前照式有源型可见光互补金属氧化物半导体(CMOS) 器件, 开展了1080 nm
连续激光与1064 nm 单脉冲ns 激光损伤效应的对比研究, 观察到了CMOS 出现点损伤 …
连续激光与1064 nm 单脉冲ns 激光损伤效应的对比研究, 观察到了CMOS 出现点损伤 …
[PDF][PDF] 脉冲激光对CCD 成像器件的破坏机理研究
邱冬冬， 张震， 王睿， 江天， 程湘爱 - Acta Optica Sinica, 2011 - researching.cn
摘要针对脉冲激光辐照CCD 造成其输出图像出现不可恢复的白色亮线和全场黑屏的破坏现象,
通过测量驱动电极与衬底之间的阻值, 观察光斑区域不同分层的破坏形貌和检测输出波形等方法 …
通过测量驱动电极与衬底之间的阻值, 观察光斑区域不同分层的破坏形貌和检测输出波形等方法 …
Radiation effects in charge-coupled device (CCD) imagers and CMOS active pixel sensors
GR Hopkinson, A Mohammadzadeh - International journal of high …, 2004 - World Scientific
This review concerns radiation effects in silicon Charge-Coupled Devices (CCDs) and
CMOS active pixel sensors (APSs), both of which are used as imagers in the visible region …
CMOS active pixel sensors (APSs), both of which are used as imagers in the visible region …
Displacement Damage Effects on a CDTI-based CCD-on-CMOS: Dark Current and Charge Transfer Inefficiency
Displacement Damage effects induced by proton and neutron irradiation are explored in a
capacitive deep trench CCD-on-CMOS image sensor. Dark current and charge transfer …
capacitive deep trench CCD-on-CMOS image sensor. Dark current and charge transfer …
Proton-induced CCD charge transfer degradation at low-operating temperatures
GR Hopkinson - IEEE Transactions on Nuclear Science, 2001 - ieeexplore.ieee.org
Measurements of charge transfer inefficiency (CTI) at charge-coupled device
temperatures/spl sim/-100/spl deg/C show that proton-induced E-centers can be kept filled …
temperatures/spl sim/-100/spl deg/C show that proton-induced E-centers can be kept filled …
Low temperature testing and neutron irradiation of a swept charge device on board the HXMT satellite
YS Wang, Y Chen, YP Xu, YJ Yang, WW Cui… - Chinese …, 2012 - iopscience.iop.org
We present the low temperature testing of an SCD detector, investigating its performance
such as readout noise, energy resolution at 5.9 keV and dark current. The SCD's …
such as readout noise, energy resolution at 5.9 keV and dark current. The SCD's …