Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing
phenomena. Examples include three-dimensional island formation, injection of dislocations …

We develop a theoretical model to elucidate the nucleation of strained islands on patterned
substrates. We show that island nucleation is directed to the preferred sites by a much lower …

We describe the growth of patterned cobalt onto a mechanically scratched copper substrate.
The deposition of patterned cobalt thin-films was carried out by electrodeposition from a …

We devise a nonlinear dynamical model of the growth of strained islands on a pattern. We
study the morphological instability of a thin film that develops with a characteristic …

Heteroepitaxial growth on a pit-patterned substrate is investigated by phase-field
simulations, tackling both film and substrate geometry and elastic properties. The dynamics …

We study the combination of the Asaro–Tiller–Grinfeld morphological instability of a strained
film and the organizing effect of an underlying patterned substrate. We use a continuum …

Si and Ge growth on the stripe patterned Si (001) substrates is studied using scanning
tunneling microscopy. During Si buffer growth, the stripe morphology rapidly evolves from …

A review on the growth and characterization of site‐selective quantum dots (QDs) is
presented. First, a theoretical model is used to describe the mechanism leading to the …

The self-assembly of heteroepitaxial quantum dots on ultrathin substrates is analyzed within
the context of small perturbation theory. Analytical expressions are derived for the …