Predicting damage production in monoatomic and multi-elemental targets using stopping and range of ions in matter code: Challenges and recommendations
The computer code, Stopping and Range of Ions in Matter (SRIM), is widely used to describe
energetic processes of ion-solid interactions; its predictive power relies on the accuracy of …
energetic processes of ion-solid interactions; its predictive power relies on the accuracy of …
Irradiation performance of high entropy ceramics: A comprehensive comparison with conventional ceramics and high entropy alloys
High entropy ceramics (HECs) are a novel class of ceramics that exhibit high melting point,
excellent high-temperature mechanical performance, and superb corrosion resistance …
excellent high-temperature mechanical performance, and superb corrosion resistance …
Raman spectroscopy study of heavy-ion-irradiated α-SiC
S Sorieul, JM Costantini, L Gosmain… - Journal of Physics …, 2006 - iopscience.iop.org
Raman spectroscopy was used to investigate the structure of ion-irradiated α-SiC single
crystals at room temperature and 400 C. Irradiations induce a decrease of the Raman line …
crystals at room temperature and 400 C. Irradiations induce a decrease of the Raman line …
Atomistic origin of Urbach tails in amorphous silicon
Y Pan, F Inam, M Zhang, DA Drabold - Physical review letters, 2008 - APS
Exponential band edges have been observed in a variety of materials, both crystalline and
amorphous. In this Letter, we infer the structural origins of these tails in amorphous and …
amorphous. In this Letter, we infer the structural origins of these tails in amorphous and …
Nanoscale engineering of radiation tolerant silicon carbide
Radiation tolerance is determined by how effectively the microstructure can remove point
defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of …
defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of …
Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation
Understanding energy dissipation processes in electronic/atomic subsystems and
subsequent non-equilibrium defect evolution is a long-standing challenge in materials …
subsequent non-equilibrium defect evolution is a long-standing challenge in materials …
Anisotropic defect distribution in He+-irradiated 4H-SiC: Effect of stress on defect distribution
S Yang, Y Nakagawa, M Kondo, T Shibayama - Acta materialia, 2021 - Elsevier
Irradiation-induced anisotropic swelling in hexagonal α-SiC is known to degrade the
mechanical properties of SiC; however, the associated physical mechanism and …
mechanical properties of SiC; however, the associated physical mechanism and …
Ion-induced damage accumulation and electron-beam-enhanced recrystallization in
Damage accumulation in strontium titanate (Sr Ti O 3) from 1.0 MeV Au irradiation has been
investigated at temperatures from 150 to 400 K. The relative disorder on the Sr and Ti …
investigated at temperatures from 150 to 400 K. The relative disorder on the Sr and Ti …
Coupled effects of electronic and nuclear energy deposition on damage accumulation in ion-irradiated SiC
Coupling between electronic and nuclear energy dissipation in ion-irradiated, single crystal
4H-SiC has been investigated using Si, Ti, and Ni ions over a range of energies at 300 K …
4H-SiC has been investigated using Si, Ti, and Ni ions over a range of energies at 300 K …
Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
A Debelle, L Thomé, D Dompoint… - Journal of Physics D …, 2010 - iopscience.iop.org
Abstract 6H-SiC and 3C-SiC single crystals were simultaneously irradiated at room
temperature with 100 keV Fe ions at fluences up to 4× 10 14 cm− 2 (∼ 0.7 dpa), ie up to …
temperature with 100 keV Fe ions at fluences up to 4× 10 14 cm− 2 (∼ 0.7 dpa), ie up to …