Abstract Fully-Depleted (FD) Silicon-on-Insulator (FD SOI) MOS structures have attained
remarkable attention due to its immunity over various short-dimension effects and lesser …

This paper presents the design and analysis of ring oscillator circuit based on nano-scaled
SOI MOSFETs for low power applications. Recently, fully depleted silicon-on-insulator (FD …

In this paper, the proposed modified source and modified drain fully depleted silicon-on-
insulator metal oxide semiconductor field effect transistor (FD-SOI MOSFET) presents better …

This paper presents a new structure of Dielectric Separated Independent Gates Junctionless
Transistor (DSIG-JLT) with four independent gates. The proposed DSIG-JLT is used to …

This Paper is focused on improving the ON current and reducing the OFF current with the
use of different types of the high-k spacer. Some spacers provide better ON current and …

This paper is about to compare the electrical performance of conventional FD-SOI MOSFET
with the BOX integrated substrate SOI MOSFET. The performance is compared and …

Silicon on insulator (SOI) technology permits a good solution to the miniaturization as the
MOSFET size scales down. This paper is about to compare the electrical performance of …

基于SMIC0. 18μmCMOS 工艺, 设计了一种应用于自适应系统的可重构2 阶Σ-Δ 调制器.
引入动态电压调整技术, 研究了不同输入信号下如何通过降低电源电压来节省ADC 功耗 …

In this paper, a proposed structure of hetero-dielectric stacked buried oxide on the modified
source-drain fully depleted silicon on insulator (HB MS-MD FDSOI). It presents improved …

In this paper, 22nm FDSOI MOSFET having Modified Source/Drain with Dual Gate has been
analyzed. This device, not only provides higher ON current but it has also a lower leakage …