Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
Stabilization of phase-pure rhombohedral in pulsed laser deposited thin films
Controlling the crystalline structure of hafnium zirconate and its epitaxial relationship to a
semiconducting electrode has high technological interest, as ferroelectric materials are key …
semiconducting electrode has high technological interest, as ferroelectric materials are key …
Vector piezoelectric response and ferroelectric domain formation in Hf 0.5 Zr 0.5 O 2 films
The piezoelectric response in polycrystalline films of doped ferroelectric HfO2 has been
explored so far; however, the lack of texture in most of the studied films prevents its full …
explored so far; however, the lack of texture in most of the studied films prevents its full …
No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron …
R Shimura, T Mimura, A Tateyama… - physica status solidi …, 2022 - Wiley Online Library
Y‐doped HfO2 ferroelectric films of≈ 1 μm thick are deposited without heating by a radio
frequency magnetron sputtering method.{100}‐oriented epitaxial films with orthorhombic …
frequency magnetron sputtering method.{100}‐oriented epitaxial films with orthorhombic …