Single quantum dot nanolaser

S Strauf, F Jahnke - Laser & Photonics Reviews, 2011 - Wiley Online Library
Recent theoretical and experimental progress on nanolasers is reviewed with a focus on the
emission properties of devices operating with a few or even an individual semiconductor …

[图书][B] Physics of semiconductors

M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

Impact of size, shape, and composition on piezoelectric effects and electronic properties of quantum dots

A Schliwa, M Winkelnkemper, D Bimberg - Physical Review B—Condensed …, 2007 - APS
The strain fields in and around self-organized In (Ga) As∕ Ga As quantum dots (QDs)
sensitively depend on QD geometry, average InGaAs composition, and the In∕ Ga …

Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effects

G Bester, A Zunger - Physical Review B—Condensed Matter and Materials …, 2005 - APS
Self-assembled quantum dots are often modeled by continuum models (effective mass or k∙
p) that assume the symmetry of the dot to be that of its overall geometric shape. Lens …

Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra

S Schulz, S Schumacher, G Czycholl - Physical Review B—Condensed Matter …, 2006 - APS
In this work we investigate the electronic and optical properties of self-assembled quantum
dots by means of a tight-binding model. Coulomb and dipole matrix elements are calculated …

Excitons, biexcitons, and trions in self-assembled quantum dots: Recombination energies, polarization, and radiative lifetimes versus dot height

GA Narvaez, G Bester, A Zunger - Physical Review B—Condensed Matter and …, 2005 - APS
We calculate the height dependence of recombination energies, polarization, and radiative
lifetimes of the optical transitions of various excitonic complexes: neutral excitons (X 0) …

Atomistic tight-binding theory of multiexciton complexes in a self-assembled InAs quantum dot

M Zieliński, M Korkusiński, P Hawrylak - Physical Review B—Condensed …, 2010 - APS
We present atomistic tight-binding theory of electronic structure and optical properties of
InAs/GaAs self-assembled quantum dots. The tight-binding model includes zincblende …

Strain effects on the electronic structure of strongly coupled self-assembled quantum dots: Tight-binding approach

W Jaskólski, M Zieliński, GW Bryant, J Aizpurua - Physical Review B …, 2006 - APS
We present an atomistic tight-binding study of the electronic structure and optical properties
of vertically stacked, double, self-assembled, InAs∕ GaAs quantum dots. The investigated …

Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

S Lee, OL Lazarenkova, P von Allmen, F Oyafuso… - Physical Review B …, 2004 - APS
The effect of wetting layers on the strain and electronic structure of InAs self-assembled
quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and …

Ultrahigh Power Factor and Ultralow Thermal Conductivity at Room Temperature in PbSe/SnSe Superlattice: Role of Quantum‐Well Effect

Z Gao, X Ning, J Wang, J Wang, S Wang - Small, 2022 - Wiley Online Library
Reduced dimension is one of the effective strategies to modulate thermoelectric properties.
In this work, n‐type PbSe/SnSe superlattices with quantum‐well (QW) structure are …