The research and development of nanotechnology has led to materials science and
engineering entering the “nanomaterial era”. It is pivotal for analyzing the physicochemical …

With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …

This paper reports on the integration of vertical nTunnel FETs (TFETs) with SiGe hetero-
junction and analyzes the presence of trap-assisted tunneling impacting the device …

High-performance lithium-ion batteries (LIBs) are in increasing demand for a variety of
applications in rapidly growing energy-related fields including electric vehicles. To develop …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

We report on the process integration of vertical silicon Tunnel FETs (TFETs) and analyze the
impact of process and geometrical parameters on the device behavior. The gate–source …

In this perspectives paper we will explore the doping state-of-the-art as it evolves for 3D to
2D structures and materials, and the following impact on the metrology methods needed to …

Control over the doping at the nanoscale during the growth of nanostructures is one of the
key challenges of device fabrication. In this work we study p (Zn)-and n (Sn)-doping …

The fabrication and integration of low-resistance carbon nanotubes (CNTs) for interconnects
in future integrated circuits requires characterization techniques providing structural and …

With the transition from planar to three‐dimensional device architectures such as FinFets,
TFETs and nanowires, new metrology approaches are required to characterize the 3D …