Towards solar grade silicon: Challenges and benefits for low cost photovoltaics

S Pizzini - Solar energy materials and solar cells, 2010 - Elsevier
It is well known that silicon in its various structural configurations (single crystal,
multicrystalline, amorphous, micro-nanocrystalline) supplies almost 90% of the substrates …

Heat transport at silicon grain boundaries

E Isotta, S Jiang, R Bueno‐Villoro… - Advanced Functional …, 2024 - Wiley Online Library
Engineering microstructural defects, like grain boundaries, offers superior control over
transport properties in energy materials. However, technological advancement requires …

Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography

A Stoffers, O Cojocaru‐Mirédin… - Progress in …, 2015 - Wiley Online Library
This study aims to better understand the influence of crystallographic structure and impurity
decoration on the recombination activity at grain boundaries in multicrystalline silicon. A …

Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots

B Ryningen, G Stokkan, M Kivambe, T Ervik, O Lohne - Acta materialia, 2011 - Elsevier
Highly detrimental dislocation clusters are frequently observed in lab-scale as well as
industrially produced multicrystalline silicon ingots for solar cell applications. This paper …

A critical review of the process and challenges of silicon crystal growth for photovoltaic applications

S Sekar, K Thamotharan, S Manickam… - Crystal Research …, 2024 - Wiley Online Library
Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and
economically acceptable alternative source to fossil fuels. The majority of commercially …

Gettering of metallic impurities in photovoltaic silicon

SA McHugo, H Hieslmair, ER Weber - Applied Physics A, 1997 - Springer
This work addresses the issue of structural defect-metallic impurity interactions in
photovoltaic silicon and their effect on minority carrier diffusion length values. Aluminium …

Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells

L Liu, S Nakano, K Kakimoto - Journal of Crystal Growth, 2008 - Elsevier
The content and uniformity of carbon and silicon carbide (SiC) precipitates have an
important impact on the efficiency of solar cells made of multicrystalline silicon. We …

Growth of semiconductor silicon crystals

K Kakimoto, B Gao, X Liu, S Nakano - Progress in Crystal Growth and …, 2016 - Elsevier
This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon
for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a …

Oxygen and carbon precipitation in multicrystalline solar silicon

HJ Möller, L Long, M Werner, D Yang - physica status solidi (a), 1999 - Wiley Online Library
Oxygen and carbon are the main impurities in multicrystalline silicon for photovoltaic
applications. Precipitation of oxygen and carbon occurs during crystal growth and solar cell …

The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process

YY Teng, JC Chen, CW Lu, CY Chen - Journal of crystal growth, 2010 - Elsevier
In this study, we performed a numerical simulation of the growth of multicrystalline silicon
ingots using the DSS method and compared the results with the experiments. The thermal …