Oriented attachment: from natural crystal growth to a materials engineering tool

BBV Salzmann, MM Van Der Sluijs… - Accounts of chemical …, 2021 - ACS Publications
Conspectus Intuitively, chemists see crystals grow atom-by-atom or molecule-by-molecule,
very much like a mason builds a wall, brick by brick. It is much more difficult to grasp that …

Twisted black phosphorus–based van der Waals stacks for fiber-integrated polarimeters

Y Xiong, Y Wang, R Zhu, H Xu, C Wu, J Chen, Y Ma… - Science …, 2022 - science.org
The real-time, in-line analysis of light polarization is critical in optical networks, currently
suffering from complex systems with numerous bulky opto-electro-mechanical elements …

Recent advances in 2D TMD circular photo-galvanic effects

S Aftab, HH Hegazy, MZ Iqbal - Nanoscale, 2023 - pubs.rsc.org
Two-dimensional (2D) layered semiconductors are appealing materials for high-specific-
power photovoltaic systems due to their unique optoelectronic properties. The 2D materials …

Effect of vacancies on photogalvanic effect in two-dimensional WSe2 photodetector

X Sun, S Yin, D Wei, Y Li, Y Ma, X Dai - Applied Surface Science, 2023 - Elsevier
Vacancy is an important element affecting the photogalvanic effect (PGE). However, the role
of different vacancies on the PGE photocurrent remains unnoticed. This research has …

A promising polarization-sensitive ultraviolet photodetector based on the two-dimensional ZrNBr-ZrNCl lateral heterojunction with enhanced photoresponse: A …

Y Zhang, R Cao, Y Hu, Y Wang, Y Xie - Applied Surface Science, 2021 - Elsevier
Photogalvanic effect (PGE) enables a self-powered and highly polarization-sensitive
ultraviolet photodetection (UV-PHD), however the photocurrent generated in the PGE is …

Largely enhanced photogalvanic effects in a phosphorene photodetector by strain-increased device asymmetry

J Zhao, Y Hu, Y Xie, L Zhang, Y Wang - Physical Review Applied, 2020 - APS
The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the
generation of an open-circuit voltage that is much larger than the bandgap, making it rather …

[HTML][HTML] A direction-sensitive photodetector based on the two-dimensional WSe2/MoSe2 lateral heterostructure with enhanced photoresponse

X Sun, S Yin, H Yu, D Wei, Y Ma, X Dai - Results in Physics, 2023 - Elsevier
Photodetectors based on anisotropic materials are attracting lots of attention. This research
systematically investigates the anisotropic photoresponse of photodetectors based on the …

Perfect in-plane spin-valve driven by photogalvanic effect

Y Luo, Y Xie, J Zhao, Y Hu, X Ye, S Ke - Physical Review Materials, 2021 - APS
Out-of-plane spin tunneling through the two-dimensional (2D) van der Waals CrI 3 multilayer
has recently been deeply explored, and giant magnetoresistance has been achieved in …

Multifunctional Two-Dimensional // Photodetector Driven by the Photogalvanic Effect

L Shu, L Qian, X Ye, Y Xie - Physical Review Applied, 2022 - APS
Semiconducting monolayer Mo Si 2 N 4 and monolayer WSi 2 N 4 have recently been
fabricated and a number of two-dimensional (2D) materials with the same chemical formula …

[HTML][HTML] Photoelectric properties of monolayer WS2-MoS2 lateral heterojunction from first principles

PP Liu, ZG Shao, WM Luo, HB Li, M Yang - Physics Letters A, 2021 - Elsevier
The first-principles calculation is applied to investigate the photocurrents elicited by the
circular photogalvanic effect (CPGE) and linear photogalvanic effect (LPGE) of monolayer …