2‐D analytical model for current–voltage characteristics and output conductance of AlGaN/GaN MODFET
Rashmi, S Haldar, RS Gupta - Microwave and Optical …, 2001 - Wiley Online Library
A two‐dimensional analytical model for an AlGaN/GaN MODFET is presented. The model
assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and …
assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and …
Thermal effect on Layers of 3D Printed Components & its impact on Material's Property
The purpose of this study is to investigate the thermal interaction of layers of 3D printed
components. Thermal bond formation happens as a result of the raw material's molten …
components. Thermal bond formation happens as a result of the raw material's molten …
An AlGaN/GaN HEMT by the periodic pits in the buffer layer
SSS Jaghargh, AA Orouji - Physica Scripta, 2019 - iopscience.iop.org
In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) by the periodic pits in
the end of the buffer layer (PPB-HEMT) is proposed. The main focus of this proposed …
the end of the buffer layer (PPB-HEMT) is proposed. The main focus of this proposed …
An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics
SS Sajjadi Jaghargh, AA Orouji - International Journal of …, 2020 - Wiley Online Library
In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC‐HEMT) is
proposed. The main purpose of the paper is an increase in the breakdown voltage of a …
proposed. The main purpose of the paper is an increase in the breakdown voltage of a …
An analytical parasitic resistance dependent Id–Vd model for planar doped InAlAs/InGaAs/InP HEMT using non-linear charge control analysis
R Gupta, A Kranti, S Haldar, M Gupta… - Microelectronic …, 2002 - Elsevier
An analytical parasitic resistance dependent model for the current voltage characteristics for
InAlAs/InGaAs/InP HEMT is proposed. The model uses a new polynomial dependence of …
InAlAs/InGaAs/InP HEMT is proposed. The model uses a new polynomial dependence of …
Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT
Intermodulation distortion tests using the two‐tone technique with an extensive bias range
were used to demonstrate the nonlinearity in terms of frequency for active devices like nano …
were used to demonstrate the nonlinearity in terms of frequency for active devices like nano …
A new depletion dependent analytical model for sheet carrier density of InAlAs/InGaAs heterostructure, InP based HEMT
R Gupta, M Gupta, RS Gupta - Solid-State Electronics, 2003 - Elsevier
A new analytical model for InAlAs/InGaAs heterojunction, InP based high electron mobility
transistor (HEMT) incorporating the depletion effect in the InAlAs region is developed and …
transistor (HEMT) incorporating the depletion effect in the InAlAs region is developed and …
[PDF][PDF] InP 基HEMT 器件中二维电子气浓度及分布与沟道层厚度关系的理论分析
李东临， 曾一平 - 物理学报, 2006 - wulixb.iphy.ac.cn
利用数值计算的方法研究了InP 基高电子迁移率晶体管(HEMT) 中沟道厚度对沟道中二维电子气
(2DEG) 性质的影响, 并对产生这种影响的原因进行了深入探讨. 计算结果表明 …
(2DEG) 性质的影响, 并对产生这种影响的原因进行了深入探讨. 计算结果表明 …
Performance Analysis, Design and simulation of Piezoresistive Pressure Sensor
In this paper, we created a Piezo-resistive Pressure Sensor based on MEMS technology to
apply pressure to the sensor's edge and studied the model's pressure effects. The boundary …
apply pressure to the sensor's edge and studied the model's pressure effects. The boundary …
Frequency optimization of pseudomorphic modulation‐doped field‐effect transistor (AlGaAs/InGaAs) for microwave and millimeter‐wave applications
A Agrawal, A Goswami… - Microwave and Optical …, 2000 - Wiley Online Library
The results of an analysis based on the solution of the 2‐D Poisson equation are presented
to investigate the dependence of the small‐signal parameters on biasing conditions. The …
to investigate the dependence of the small‐signal parameters on biasing conditions. The …