Oxygen defect processes in silicon and silicon germanium

A Chroneos, EN Sgourou, CA Londos… - Applied Physics …, 2015 - pubs.aip.org
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing

Y Zhiyenbayev, W Redjem, V Ivanov, W Qarony… - Optics …, 2023 - opg.optica.org
Quantum light sources play a fundamental role in quantum technologies ranging from
quantum networking to quantum sensing and computation. The development of these …

Optical properties of an ensemble of G-centers in silicon

C Beaufils, W Redjem, E Rousseau, V Jacques… - Physical Review B, 2018 - APS
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of
substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion …

Manipulating Photoluminescence of Carbon G‐center in Silicon Metasurface with Optical Bound States in the Continuum

L Zhu, S Yuan, C Zeng, J Xia - Advanced Optical Materials, 2020 - Wiley Online Library
In this paper, a dielectric metasurface is demonstrated to manipulate the photoluminescence
of the G‐centers introduced by nanopatterning of crystalline silicon. The metasurface …

[HTML][HTML] Theoretical investigation of nitrogen-vacancy defects in silicon

MS Potsidi, N Kuganathan, SRG Christopoulos… - AIP Advances, 2022 - pubs.aip.org
Theoretical investigation of nitrogen-vacancy defects in silicon | AIP Advances | AIP Publishing
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Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study

SRG Christopoulos, EN Sgourou, A Chroneos… - Applied Sciences, 2024 - mdpi.com
Carbon (C) is an important isovalent impurity in silicon (Si) that is inadvertently added in the
lattice during growth. Germanium (Ge), tin (Sn), and lead (Pb) are isovalent atoms that are …

C4 defect and its precursors in Si: first-principles theory

DJ Backlund, SK Estreicher - Physical Review B—Condensed Matter and …, 2008 - APS
The irradiation of c-Si produces self-interstitials (Si i), which interact with substitutional
carbon to produce interstitial carbon (C i). The latter is mobile at room temperature and …

Electroluminescence of nanopatterned silicon with carbon implantation and solid phase epitaxial regrowth

E Rotem, JM Shainline, JM Xu - Optics express, 2007 - opg.optica.org
Electroluminescence at 1.28 μm is observed in a nanopatterned silicon test structure that
has been subjected to carbon implantation followed by solid-phase epitaxial regrowth for …

The interstitial carbon–dioxygen center in irradiated silicon

MS Potsidi, N Kuganathan, SRG Christopoulos… - Crystals, 2020 - mdpi.com
We investigated, experimentally as well as theoretically, defect structures in electron
irradiated Czochralski-grown silicon (Cz-Si) containing carbon. Infrared spectroscopy (IR) …

The CiCs(SiI)n Defect in Silicon from a Density Functional Theory Perspective

SRG Christopoulos, EN Sgourou, RV Vovk… - Materials, 2018 - mdpi.com
Carbon constitutes a significant defect in silicon (Si) as it can interact with intrinsic point
defects and affect the operation of devices. In heavily irradiated Si containing carbon the …