ZnO is a wide‐bandgap (3.37 eV at room temperature) oxide semiconductor that is attractive
for its great potential in short‐wavelength optoelectronic devices, in which high quality films …

GaN is a unique material with outstanding optoelectronic properties and is suitable for
application in light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility …

High-quality GaN-based light emitting diode (LED) wafers on La0. 3Sr1. 7AlTaO6
(LSAT)(111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the …

Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam
epitaxy on (001)-,(011)-, and (111)-orientated SrTiO3 single-crystal substrates. The growth …

Zn O (0001)∕ Si (111) interface is engineered by using a three-step technique, involving
low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double …

Using reactive radio-frequency magnetron sputtering, epitaxial growth of ZnO film was
observed on Si (001) substrate at different temperatures ranging from room temperature to …

The growth of c-plane GaN films on La0. 3Sr1. 7AlTaO6 (LSAT)(111) substrates has been
carried out by molecular beam epitaxy (MBE) at various substrate temperatures. GaN grown …

The microstructural properties of heteroepitaxial ZnO thin films prepared by laser molecular
beam epitaxy (L-MBE) were investigated on SrTiO 3 substrates and BaTiO 3/SrTiO 3 pseudo …

A magnesium wetting layer was used to modify the surface structure of Mg Al 2 O 4 (111)
substrate to achieve growth of high-quality ZnO film by radio frequency plasma-assisted …

Wurtzite ZnO thin films with different epitaxial relationships have been grown on (0 0 1)-,(0 1
1)-, and (1 1 1) LaAlO 3 (LAO) single-crystal substrates by pulsed laser deposition. Nonpolar …