Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

The applications of wide bandgap (WBG) semiconductors represented by silicon carbide
(SiC) and gallium nitride (GaN) in power modules are currently limited by the thermal …

We propose a plasma-activated direct bonding process at low temperatures (≤ 200° C) to
form heterostructures between single-crystalline SiC and conventional Si-based substrates …

With the inherent advantages of material, SiC MOSFET is promising in many applications.
There is much research on failure analysis of SiC MOSFET under extreme conditions. A …

Abstract Development of the high-power devices based on the third-generation
semiconductor puts forward a high requirement for the thermal performance of electronic …

Comprehensive and accurate reliability assessment can address the existing design
challenges in using wide bandgap-based semiconductor technology in new power …

Wide band-gap semiconductor materials such as silicon carbide (SiC) and gallium nitride
(GaN) have been widely investigated these years for their preferred operation at higher …

Ce travail de recherche porte sur l'étude de l'effet du vieillissement par fatigue
électrothermique sur la compatibilité électromagnétique des composants de puissance à …