Write once, get 50% free: Saving {SSD} erase costs using {WOM} codes
Write Once, Get 50% Free: Saving SSD Erase Costs Using WOM Codes Page 1 This paper
is included in the Proceedings of the 13th USENIX Conference on File and Storage …
is included in the Proceedings of the 13th USENIX Conference on File and Storage …
Characterization and error-correcting codes for TLC flash memories
Flash memory has become the storage medium of choice in portable consumer electronic
applications, and high performance solid state drives (SSDs) are also being introduced into …
applications, and high performance solid state drives (SSDs) are also being introduced into …
Rate-adaptive protograph LDPC codes for multi-level-cell NAND flash memory
The multi-level-cell (MLC) NAND flash memory exhibits a diversity of the raw bit error rate
(BER) over different program/erase (P/E) cycles and different types of bits within a memory …
(BER) over different program/erase (P/E) cycles and different types of bits within a memory …
Codes for write-once memories
A write-once memory (WOM) is a storage device that consists of cells that can take on q
values, with the added constraint that rewrites can only increase a cell's value. A length-n, t …
values, with the added constraint that rewrites can only increase a cell's value. A length-n, t …
Error analysis and inter-cell interference mitigation in multi-level cell flash memories
V Taranalli, H Uchikawa… - 2015 IEEE International …, 2015 - ieeexplore.ieee.org
With an aim to characterize, model and understand the types of errors caused by the inter-
cell interference (ICI) effect in flash memories, we perform a series of program/erase (P/E) …
cell interference (ICI) effect in flash memories, we perform a series of program/erase (P/E) …
The Devil Is in the Details: Implementing Flash Page Reuse with {WOM} Codes
Flash memory is prevalent in modern servers and devices. Coupled with the scaling down of
flash technology, the popularity of flash memory motivates the search for methods to …
flash technology, the popularity of flash memory motivates the search for methods to …
Modeling power consumption of nand flash memories using flashpower
Flash is the most popular solid-state memory technology used today. A range of consumer
electronics products, such as cell-phones and music players, use flash memory for storage …
electronics products, such as cell-phones and music players, use flash memory for storage …
Exploiting intracell bit-error characteristics to improve min-sum LDPC decoding for MLC NAND flash-based storage in mobile device
A multilevel per cell (MLC) technique significantly improves the storage density, but also
poses serious data integrity challenge for NAND flash memory. This consequently makes …
poses serious data integrity challenge for NAND flash memory. This consequently makes …
Channel models for multi-level cell flash memories based on empirical error analysis
V Taranalli, H Uchikawa… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
We propose binary discrete parametric channel models for multi-level cell (MLC) flash
memories that provide accurate error-correcting code (ECC) performance estimation by …
memories that provide accurate error-correcting code (ECC) performance estimation by …
Adaptive read thresholds for NAND flash
A primary source of increased read time on NAND flash comes from the fact that, in the
presence of noise, the flash medium must be read several times using different read …
presence of noise, the flash medium must be read several times using different read …