Effects of various functionalisation layers on ammonia gas sensing using AlGaN/GaN high electron mobility transistors
Low concentration (< 50 ppm) sensing of NH3 over a wide temperature range of 30-275° C
using AlGaN/GaN high electron mobility transistor (HEMT) based gas sensors with Pt, Pd …
using AlGaN/GaN high electron mobility transistor (HEMT) based gas sensors with Pt, Pd …
Studies on GaN HEMT based gas sensors for low concentrations of NO2 and NH3
A Ranjan - 2019 - dr.ntu.edu.sg
In recent decades, the demand for gas sensors has increased rapidly because of their large-
scale use in medical instruments, automobiles and laboratories. For example, nitrogen …
scale use in medical instruments, automobiles and laboratories. For example, nitrogen …