Epitaxial oxides on semiconductors: from fundamentals to new devices
Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …
functionalities can range from high temperature superconductivity to multiferroicity and novel …
Recent progress of rare earth oxides for sensor, detector, and electronic device applications: a review
Rare earth oxides (REOs) are deemed important from both industrial implementation and
research insight perspectives. One of the most conspicuous attributes of REOs is sensing …
research insight perspectives. One of the most conspicuous attributes of REOs is sensing …
Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K
R Sarkar, BB Upadhyay, S Bhunia… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, we report the temperature-dependent transistor characteristic of Epi-Gd 2 O
3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and …
3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and …
A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures
In this paper, we present the electrical properties of hexagonal Gd 2 O 3 grown epitaxially on
GaN/Si (111) and AlGaN/GaN/Si (111) virtual substrates. GaN and AlGaN/GaN …
GaN/Si (111) and AlGaN/GaN/Si (111) virtual substrates. GaN and AlGaN/GaN …
High‐Performance GaN HEMTs with I ON/I OFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric
Herein, Ta2O5 high‐k gate dielectric‐based GaN high electron‐mobility transistors (HEMTs)
with a high I ON/I OFF ratio and low gate leakage current are demonstrated without any …
with a high I ON/I OFF ratio and low gate leakage current are demonstrated without any …