We present Ge rib waveguide devices fabricated on a Ge-on-insulator (GeOI) wafer as a
proof-of-concept Ge mid-infrared photonics platform. Numerical analysis revealed that the …

We present a focusing subwavelength grating (SWG) for efficient coupling of mid-infrared
(mid-IR) light into suspended membrane Ge photonic integrated circuits (PICs) that enable …

Germanium is a material of high interest for mid-infrared (MIR) integrated photonics due to
its complementary metal–oxide–semiconductor (CMOS) compatibility and its wide …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

In this paper, normal incidence vertical pin photodetectors on a germanium-on-insulator
(GOI) platform were demonstrated. The vertical pin structure was realized by ion-implanting …

Germanium is a promising material for mid-infrared (MIR) integrated photonics due to its
CMOS compatibility and wide transparency window covering the fingerprint spectral region …

While there have been notable advancements in the quality of epitaxial Ge on Si, the crystal
quality of bulk Ge remains much superior, which provides an effective method to study the …

The concept of three-dimensional stacking of device layers has attracted significant attention
with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration …

In the past decade, there has been tremendous progress in integrating chalcogenide phase-
change materials (PCMs) on the silicon photonic platform for non-volatile memory to …

Integrated mid-infrared (MIR) photonics has been widely investigated for the past decade,
where germanium (Ge) is a promising optical material in this regime. In this work, we studied …