Abstract 4H‐SiC MISFETs with nitrogen‐containing insulators have been fabricated and
characterized. Several techniques have been explored to incorporate nitrogen in the gate …

We have developed low temperature formation methods of SiO2/Si and SiO2/SiC structures
by use of nitric acid, ie, nitric acid oxidation of Si (or SiC)(NAOS) methods. By use of the …

Normally off 4H-SiC MOSFET devices have been fabricated on a p-type semiconductor and
electrically characterized at different temperatures. A gate oxide obtained by nitrogen ion …

Detailed investigations on the pre-oxidation nitrogen implantation process for the
improvement of channel mobility in 4H-SiC MOSFETs are reported. Comparisons with …

Silicon carbide n-type metal-oxide-semiconductor field effect transistors (MOSFETs) with
different p-body acceptor concentrations were characterized by Hall effect. Normally OFF …

The equations for the average oxide fields for carrier tunnelling across the metal-gated MOS
devices in accumulation and having charges in the oxide have been derived in this article. It …

Electron states at the SiO 2/4 H–SiC interface have been investigated using capacitor
structures and especially, the influence of excess nitrogen, introduced by ion implantation, at …

The use of SiO 2/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can
be problematic due to high interface state density (D it) and low field-effect mobility (μ fe) …

The electrical characteristics of n-metal oxide semiconductor field effect transistors (⁠ n-
MOSFETs) fabricated on 4 H-SiC with a process based on nitrogen (N) implantation in the …

A gate oxide obtained by wet oxidation of SiC preimplanted with nitrogen has been
investigated on MOS capacitors and implemented in a n-channel MOSFET technology …