Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

Optoelectronic materials can source, detect, and control light wavelengths ranging from
gamma and x rays to ultraviolet, visible, and infrared regions. Optoelectronic devices are …

The inclusion of plasma in atomic layer deposition processes generally offers the benefit of
substantially reduced growth temperatures and greater flexibility in tailoring the gas-phase …

In this paper, we present the progress in the growth of nanoscale semiconductors grown via
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …

Thin films of materials are critical components for most areas of sustainable technologies,
making thin film techniques, such as chemical vapor deposition (CVD), instrumental for a …

Indium nitride (InN) is characterized by its high electron mobility, making it a ground-
breaking material for high frequency electronics. The difficulty of depositing high-quality …

Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …

Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of
interest to optoelectronics and telecommunication. Such applications require the deposition …

Thin AlN layers were grown at 200–650 C by plasma assisted atomic layer epitaxy (PA-ALE)
simultaneously on Si (111), sapphire (⁠ 11 2 0⁠), and GaN/sapphire substrates. The AlN …

Sophisticated thin film growth techniques increasingly rely on the addition of a plasma
component to open or widen a processing window, particularly at low temperatures. Taking …