Analytical expressions for numerical characterization of semiconductors per comparison with luminescence
MF Pereira - Materials, 2017 - mdpi.com
Luminescence is one of the most important characterisation tools of semiconductor materials
and devices. Recently, a very efficient analytical set of equations has been applied to …
and devices. Recently, a very efficient analytical set of equations has been applied to …
Direct measurement of the spectral reflectance of OP-SDL gain elements under optical pumping
C Borgentun, J Bengtsson, A Larsson - Optics express, 2011 - opg.optica.org
We report on a direct measurement method for acquiring highly precise reflectance spectra
of gain elements for semiconductor disk lasers under optical pumping. The gain element …
of gain elements for semiconductor disk lasers under optical pumping. The gain element …
Tunable semiconductor double-chirped mirror with high negative dispersion
We have developed a tunable semiconductor double-chirped mirror with high negative
dispersion grown by molecular beam epitaxy. The simplified numerical plane-wave …
dispersion grown by molecular beam epitaxy. The simplified numerical plane-wave …
Analytical expressions for the luminescence of dilute quaternary InAs (N, Sb) semiconductors
CI Oriaku, TJ Spencer, X Yang… - Journal of …, 2017 - spiedigitallibrary.org
We calculate the luminescence of the dilute quaternary InAs (N, Sb). The incorporation of N
leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves …
leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves …
A passively mode-locked, self-starting femtosecond Yb: KYW laser with a single highly dispersive semiconductor double-chirped mirror for dispersion compensation
We demonstrate a semiconductor double-chirped mirror consisting of an AlAs/GaAs
multilayer stack grown by molecular beam epitaxy. The mirror has a high negative group …
multilayer stack grown by molecular beam epitaxy. The mirror has a high negative group …
Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate
T Lin, R Sun, H Sun, E Guo, Y Duan, N Lin, X Ma… - Materials Science in …, 2016 - Elsevier
Wafers of InGaAs-emitting-layer vertical external cavity surface emitting semiconductor laser
(VECSEL) gain chip and separate active region were grown on semi-insulator GaAs …
(VECSEL) gain chip and separate active region were grown on semi-insulator GaAs …
[PDF][PDF] Wpływ profilu interfejsów i zaburzeń grubości warstw w zwierciadłach Bragga na ich własności optyczne
J Gaca, K Mazur, A Turos, M Wesołowski… - Materiały …, 2013 - bibliotekanauki.pl
Supersieci GaAs/AlAs i AlGaAs/AlAs przeznaczone do wykorzystania jako zwierciadła
Bragga otrzymano zarówno metodą epitaksji z wiązek molekularnych MBE, jak i epitaksji z …
Bragga otrzymano zarówno metodą epitaksji z wiązek molekularnych MBE, jak i epitaksji z …
Method for measuring reflectance of semiconductor disk laser gain element under optical pump excitation
C Borgentun, J Bengtsson, A Larsson - Quantum Electronics and …, 2011 - opg.optica.org
Method for Measuring Reflectance of Semiconductor Disk Laser Gain Element Under Optical
Pump Excitation Page 1 Method for Measuring Reflectance of Semiconductor Disk Laser Gain …
Pump Excitation Page 1 Method for Measuring Reflectance of Semiconductor Disk Laser Gain …
[引用][C] Corrigendum to 'Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate'[Mater. Sci. Semicond. Process. 42 (2016) 283–287]
T Lin, R Sun, H Sun, E Guo, Y Duan, N Lin… - Materials Science in …, 2016 - infona.pl
Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs
substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287] × Close The Infona portal uses …
substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287] × Close The Infona portal uses …
[引用][C] Growth and Characterization of 2. xμm VECSELs on GaSb
L Boumaa, SPR Clarkb, P Ahirwarb, C Hainsb…