ZnO and ZnO-based materials as active layer in resistive random-access memory (RRAM)

E Nowak, E Chłopocka, M Szybowicz - Crystals, 2023 - mdpi.com
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …

Efficient formaldehyde sensor development based on Cu-codoped ZnO nanomaterial by an electrochemical approach

MM Rahman - Sensors and Actuators B: Chemical, 2020 - Elsevier
An aggregated copper codoped zinc oxide (CZO; CuO. ZnO) nanomaterial was synthesized
to detect formaldehyde (HCHO) from aqueous solution via electrochemical reactions. The as …

Mesoporous Au@ ZnO flower-like nanostructure for enhanced formaldehyde sensing performance

D Liu, J Wan, H Wang, G Pang, Z Tang - Inorganic Chemistry …, 2019 - Elsevier
Abstract The Au@ ZnO flower-like nanostructure was successfully prepared by the facile
hydrothermal method, and its gas-sensing property was studied. The produced Au@ ZnO …

Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

J Molina-Reyes, L Hernandez-Martinez - Complexity, 2017 - Wiley Online Library
We present the resistive switching characteristics of Metal‐Insulator‐Metal (MIM) devices
based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A …

Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

S Kim, YF Chang, MH Kim, BG Park - Applied Physics Letters, 2017 - pubs.aip.org
This letter studies the effect of the negative-set on the resistive switching performances of
CMOS-compatible Ni/SiN x/p++-Si resistive memory devices by simply tuning x. A Ni/SiN …

Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films

JH Weng, MC Kao, KH Chen, MZ Li - Nanomaterials, 2023 - mdpi.com
Copper-doped zinc oxide films (Zn1− xCuxO)(x= 0, 2%, 4%, 6%) were fabricated on
conductive substrates using the sol-gel process. The crystal structure, optical and resistive …

Solution-processed natural konjac glucomannan material for resistive switching memory

YC Chang, HJ Liu, JC Jian, YL Hsu - ACS Applied Electronic …, 2021 - ACS Publications
Natural konjac glucomannan (KGM)-based resistive random access memory (RRAM)
devices using a simple solution process were illustrated. The memory properties of the KGM …

Effect of bottom electrode materials on resistive switching of flexible poly (N-vinylcarbazole) film embedded with TiO2 nanoparticles

J Li, C Zhang, SJ Shao - Thin Solid Films, 2018 - Elsevier
Flexible resistive random access memory devices based on polymer films embedded with
nanoparticles have attracted great attention. The electrode has been considered to play a …

Enhancing reliability of studies on single filament memristive switching via an unconventional cafm approach

N Carstens, A Vahl, O Gronenberg, T Strunskus… - Nanomaterials, 2021 - mdpi.com
Memristive devices are highly promising for implementing neuromorphic functionalities in
future electronic hardware, and direct insights into memristive phenomena on the nanoscale …

Impact of Top electrodes on the nonvolatile resistive switching properties of citrus thin films

KW Lin, TY Wang, YC Chang - Polymers, 2021 - mdpi.com
Natural citrus thin films on an indium tin oxide (ITO)/glass substrate were synthesized using
the solution method for resistive random access memory (RRAM) applications. The results …