Ge vertical heterostructures grown on deeply-patterned Si (001) were first obtained in 2012 (CV Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the …
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel …
Convexity splitting like schemes with improved accuracy are proposed for a phase field model for surface diffusion. The schemes are developed to enable large scale simulations in …
Lateral ordering of heteroepitaxial islands can be conveniently achieved by suitable pit- patterning of the substrate prior to deposition. Controlling shape, orientation, and size of the …
We discuss two doubly degenerate Cahn–Hilliard (DDCH) models for isotropic surface diffusion. Degeneracy is introduced in both the mobility function and a restriction function …
A Kosinova, D Wang, P Schaaf, O Kovalenko, L Klinger… - Acta Materialia, 2016 - Elsevier
A sequence of diffusion-controlled processes, namely, thin film dewetting, dealloying and thermal coarsening was employed for producing of hollow gold nanoparticles. The porous …
The development of three-dimensional architectures in semiconductor technology is paving the way to new device concepts for various applications, from quantum computing to single …
Shadowing effects during the growth of nano-and microstructures are crucial for the realization of several technological applications. They are given by the shielding of the …
We simulate the morphological evolution of Ge microcrystals, grown out-of-equilibrium on deeply patterned Si substrates, as resulting from surface diffusion driven by the tendency …