Unraveling the atomic structure of bulk binary Ga–Te glasses with surprising nanotectonic features for phase-change memory applications
Binary Ge–Te and ternary Ge–Sb–Te systems belong to flagship phase-change materials
(PCMs) and are used in nonvolatile memory applications and neuromorphic computing. The …
(PCMs) and are used in nonvolatile memory applications and neuromorphic computing. The …
Atypical phase-change alloy Ga 2 Te 3: atomic structure, incipient nanotectonic nuclei, and multilevel writing
Emerging brain-inspired computing, including artificial optical synapses, photonic tensor
cores, neuromorphic networks, etc., needs phase-change materials (PCMs) of the next …
cores, neuromorphic networks, etc., needs phase-change materials (PCMs) of the next …
[HTML][HTML] Density dependent local structures in InTe phase-change materials
Chalcogenide phase-change materials based random access memory (PCRAM) is one of
the leading candidates for the development of non-volatile memory and neuro-inspired …
the leading candidates for the development of non-volatile memory and neuro-inspired …
Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations
Neuromorphic computing, reconfigurable optical metamaterials that are operational over a
wide spectral range, holographic and nonvolatile displays of extremely high resolution …
wide spectral range, holographic and nonvolatile displays of extremely high resolution …
Structural and electronic properties of liquid, amorphous, and supercooled liquid phases of In2Te5 from first-principles
D Dragoni, M Bernasconi - The Journal of Chemical Physics, 2019 - pubs.aip.org
In 2 Te 5 is a stoichiometric compound in the In–Te system of interest for applications in
phase change electronic memories and thermoelectrics. Here, we perform a computational …
phase change electronic memories and thermoelectrics. Here, we perform a computational …
Unexpected role of metal halides in a chalcogenide glass network
Chalcogenide glasses containing light alkali and Group 11 (Cu, Ag) halides MY (Y= Cl, Br, I)
exhibit high ionic conductivity while their heavy alkali counterparts show promising …
exhibit high ionic conductivity while their heavy alkali counterparts show promising …
First-principles study of the liquid and amorphous phases of Sb2Te phase change memory material
L Kang, L Chen - Journal of Physics: Condensed Matter, 2021 - iopscience.iop.org
We have investigated the local structure of liquid and amorphous phases of Sb 2 Te phase
change memory material by the means of density functional theory-molecular dynamics …
change memory material by the means of density functional theory-molecular dynamics …
Decoding the Atomic Structure of Ga2Te5 PLD Films for Memory Applications using Diffraction and First-Principles Simulations
Neuromorphic computing, reconfigurable optical metamaterials operational over a wide
spectral range, holographic and nonvolatile displays of extremely high resolution, integrated …
spectral range, holographic and nonvolatile displays of extremely high resolution, integrated …
Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD
The controlled growth of chalcogenide nanoscaled phase change material structures can be
important to facilitate integration and to enable complex architectures for phase change …
important to facilitate integration and to enable complex architectures for phase change …
Variable resistance element
H Kawai, D Watanabe, T Nagase - US Patent 11,424,290, 2022 - Google Patents
According to one embodiment, a variable resistance element includes a first electrode, a
second electrode, and a variable resistance layer and a tellurium-containing compound …
second electrode, and a variable resistance layer and a tellurium-containing compound …