Implementation of high power RF devices with hybrid workfunction and OxideThickness in 22nm low-power FinFET technology
Unique High-Power FinFET device with multiple workfunction materials and oxide thickness
under a common gate, dubbed as HyPowerFF, is introduced. The proposed devices are as …
under a common gate, dubbed as HyPowerFF, is introduced. The proposed devices are as …
An E-band power amplifier using high power RF device with hybrid work function and oxide thickness in 22nm low-power FinFET
This paper presents an E-band power amplifier (PA) designed using a novel high power
FinFET device (HyPowerFF) with dual work function materials and oxide thicknesses under …
FinFET device (HyPowerFF) with dual work function materials and oxide thicknesses under …
Investigation on LDMOS characteristics of layout dependence in FinFET technology
The characteristics of a laterally diffused metal oxide semiconductor (LDMOS) with different
layout structures is investigated based on 14nm FinFET technology. The layout …
layout structures is investigated based on 14nm FinFET technology. The layout …
An Island Drain Double-Gate DeMOS With Self-Aligned Sub-Gate to Achieve Multifold Transient Frequency Enhancement
S Daulatabad, PS Swain, H Gossner… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Shallow trench isolation drain extended MOS (STI-DeMOS) devices, known for their superior
gate oxide reliability under high drain voltages, are widely used for the integration of CMOS …
gate oxide reliability under high drain voltages, are widely used for the integration of CMOS …
A mmWave switch using novel back-end-of-line (BEOL) in 22nm FinFET technology
Q Yu, J Garrett, J Waldemer, Y Ma… - 2021 IEEE MTT-S …, 2021 - ieeexplore.ieee.org
This paper presents a mmWave switch designed using novel back-end-of-line (BEOL) in
Intel 22nm FinFET (22FFL) technology. In the newly developed mmWave BEOL, ExpressVia …
Intel 22nm FinFET (22FFL) technology. In the newly developed mmWave BEOL, ExpressVia …
A study of LDMOS layout optimization of 28HKMG for RF application
G Ma, WJ Xu, B Lee - 2018 China Semiconductor Technology …, 2018 - ieeexplore.ieee.org
LDMOS (Laterally Diffused Metal Oxide Semiconductor) applications get extensively in high
voltage and smart power management. In this paper, various LDMOS layout design was …
voltage and smart power management. In this paper, various LDMOS layout design was …
Buried Oxide on Extended Drain MOSFET (BOX EDMOS) for RF applications in FDSOI/Bulk Technology
A Ivaniukovich, KY Kim, W Maeng… - 2019 IEEE SOI-3D …, 2019 - ieeexplore.ieee.org
We propose to utilize Buried Oxide (BOX) and Silicon-On-Insulator (SOI) layers as thick
oxide and contact field plate on drain drift region of EDMOS. A thick BOX can reduce electric …
oxide and contact field plate on drain drift region of EDMOS. A thick BOX can reduce electric …
Microscopic simulation of SiGe HBTs with additional mechanical stress
O Dieball, C Jungemann, B Meinerzhagen - 2022 - publications.rwth-aachen.de
Kurzfassung Motivation, Ziel und Aufgabe der Dissertation: Für
Hochgeschwindigkeitskommunikation, Radar, etc. sind Silizium-Germanium …
Hochgeschwindigkeitskommunikation, Radar, etc. sind Silizium-Germanium …
On-Resistance Improvement Impacted by Trapping Effects in Fin-LDMOS Technology
An interface trapping model of shadow trench isolation (STI)/fin boundary for a laterally
diffused metal oxide semiconductor (LDMOS) is proposed, and trapping effects on on …
diffused metal oxide semiconductor (LDMOS) is proposed, and trapping effects on on …