Multifunctional Flexible Organic Transistors with a High-k/Natural Protein Bilayer Gate Dielectric for Circuit and Sensing Applications
Organic field-effect transistors (OFETs) have opened up new possibilities as key elements
for skinlike intelligent systems, due to the capability of possessing multiple functionalities …
for skinlike intelligent systems, due to the capability of possessing multiple functionalities …
High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric
J Yang, Y Zhang, Q Wu, C Dussarrat… - … on Electron Devices, 2019 - ieeexplore.ieee.org
The high-performance ZnO thin-film transistors (TFTs) were fabricated on indium tin oxide
glass with high-capacitance atomic layer deposition (ALD)-processed ZrO2 as the gate …
glass with high-capacitance atomic layer deposition (ALD)-processed ZrO2 as the gate …
High-Performance Unannealed a-InGaZnO TFT With an Atomic-Layer-Deposited SiO2 Insulator
LL Zheng, Q Ma, YH Wang, WJ Liu… - IEEE Electron …, 2016 - ieeexplore.ieee.org
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor with an atomic-layer-deposited (ALD)
SiO 2 gate insulator was fabricated under a maximum processing temperature of 250° C and …
SiO 2 gate insulator was fabricated under a maximum processing temperature of 250° C and …
Solution-processed yttrium-doped IZTO semiconductors for high-stability thin film transistor applications
In this article, solution-processed zinc-tin-oxide (ZTO), indium-zinc-tin-oxide (IZTO), and
yttrium-doped indium-zinc-tin-oxide (IZTO: Y) thin film transistors (TFTs) were investigated …
yttrium-doped indium-zinc-tin-oxide (IZTO: Y) thin film transistors (TFTs) were investigated …
Gate dielectric treated by self-assembled monolayers (SAMs) to enhance the performance of InSnZnO thin-film transistors
W Zhong, J Zhang, Y Liu, L Tan, L Lan… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Self-assembled monolayer (SAM) treatment of gate dielectrics is a standard process for
manufacturing organic thin-film transistors (TFTs) to reduce interface trap density and …
manufacturing organic thin-film transistors (TFTs) to reduce interface trap density and …
Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors
H Cai, K Tuokedaerhan, Z Lu, H Du… - physica status solidi …, 2023 - Wiley Online Library
Herein, zirconia thin films are successfully prepared on silicon substrates using the sol–gel
method, and the microstructure, optical, and electrical properties of zirconia high‐k gate …
method, and the microstructure, optical, and electrical properties of zirconia high‐k gate …
Robust SiO2 gate dielectric thin films prepared through plasma-enhanced atomic layer deposition involving di-sopropylamino silane (DIPAS) and oxygen plasma …
YJ Choi, SM Bae, JH Kim, EH Kim, HS Hwang… - Ceramics …, 2018 - Elsevier
DIPAS (di-isopropylamino silane, H 3 Si [N (C 3 H 7) 2]) and O 2 plasma were employed,
using plasma-enhanced atomic layer deposition (PEALD), to deposit silicon oxide to …
using plasma-enhanced atomic layer deposition (PEALD), to deposit silicon oxide to …
Characterization of aluminum oxide thin films obtained by chemical solution deposition and annealing for metal–insulator–metal dielectric capacitor applications
G Suárez-Campos, D Cabrera-German… - Applied Surface …, 2020 - Elsevier
A novel chemical formulation is presented that enables the chemical solution deposition of
aluminum hydroxide thin films, which transforms into aluminum oxide through subsequent …
aluminum hydroxide thin films, which transforms into aluminum oxide through subsequent …
Acrylate-based nanocomposite zirconium-dispersed polymer dielectric for flexible oxide thin-film transistors with a curvature radius of 2 Mm
Novel hybrid dielectric film is synthesized at a low temperature of 150° C using a solution
process. Zirconium acrylate (ZrA) and poly (methyl methacrylate)(PMMA) comprise the …
process. Zirconium acrylate (ZrA) and poly (methyl methacrylate)(PMMA) comprise the …
Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor
The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a
problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable …
problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable …