A novel temperature sensitive electrical parameter of IGBT modules without involvement of operating parameters

Y Yang, X Ding, Y Wu, Z Shan, G Lyu… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The junction temperature estimation of the insulated gate bipolar transistor (IGBT) module is
crucial for reliability assessment and health management of converters. However, most of …

Coordinated PWM based Active Thermal Control for Power Semiconductor Devices in Parallel Grid-Tied Inverters

T Xu, F Gao, P Tan, F Blaabjerg - IEEE Transactions on Power …, 2024 - ieeexplore.ieee.org
This paper proposes a new active thermal control method for power semiconductor devices
in parallel grid-tied inverters using coordinated PWM, which breaks the limitation that the …

IGBT Junction Temperature Monitoring Method Current Calibration Free Based on the Narrow Pulse Injection

Y Yang, X Ding, G Sun, G Lyu… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for IGBT
reliability assessment and health management. However, most traditional methods are …

Experimental and numerical investigation on turbulent convection enhancement in minichannel heat sink with staggered V-shaped pin fins

W Gu, X Zhang, B Zhang, Q Lin, Z Jia, F Liu… - … Heat Transfer, Part A …, 2024 - Taylor & Francis
With the continuous advancements in new energy vehicle technology, the insulated gate
bipolar transistor (IGBT) thermal properties have a direct impact on power system reliability …

A Lambert importance model‐based reliability design method for power converters in switched reluctance motor systems

S Xu, H Zeng, G Qi, F Song, C Liu - International Journal of …, 2024 - Wiley Online Library
The reliability of power converters is crucial for achieving high‐performance operation in
switched reluctance motor (SRM) systems. However, there is a notable deficiency in …

Diagnosis of IGBT Module Bond Wire Independent of Temperature Based on BP Neural Network

Y Yang, X Ding, Z Shan, P Zhang - 2023 IEEE Energy …, 2023 - ieeexplore.ieee.org
The fault diagnosis of the insulated-gate bipolar transistor (IGBT) module bond wire is
crucial to monitor the IGBT module's state and avoid the converter's catastrophic fault …

Review on the Thermal Parameters Applications in the Reliability of Power Semiconductor Device

H Shen, J Zhang, P Sun, X Ma - 2024 IEEE 7th International …, 2024 - ieeexplore.ieee.org
The power semiconductor device plays a key role in the energy conversion and
management, and the failure of device usually makes great economic losses. To improve …

Intelligent Junction Temperature Estimation of an IGBT Using Machine Learning and Measurement

VY Konda, JH Jung, M Liserre - 2024 IEEE 15th International …, 2024 - ieeexplore.ieee.org
The reliability of semiconductors in power convert-ers depends mainly on the junction
temperature (T_j), and it is important to monitor T_j for reliable operation. This paper …

A Switching Frequency Selection Method for Single-phase PWM Rectifier Considering Lifespan and THD

Z Wang, B Liu, X Chen, M Lin, L Peng… - 2024 IEEE 10th …, 2024 - ieeexplore.ieee.org
Single-phase PWM rectifier is essential to the electric traction system. The power device, as
one of the most vulnerable components in the rectifier, has a significant influence on the …