We review the photoluminescence of semiconductor nanostructures in high magnetic fields,
concentrating on the effects of the applied magnetic field on orbital motion (wave function …

We present a theoretical study of the electronic and excitonic states in InAs/GaAsSb
quantum dots. We first center our study on the dependence of the antimony composition in …

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001)
substrates is studied by means of excitation and temperature-dependent …

Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-
resolved photoluminescence technique. In this type-II heterostructure the carriers of different …

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs)
can be greatly enhanced by rapid thermal annealing while preserving long radiative …

We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring
(QD/QR) samples over≥ 5 orders of magnitude of laser power. All samples exhibit a …

Microdisk lasers with active region made of type-II GaSb/GaAs quantum dots on the GaAs
substrate have been demonstrated. A microdisk cavity with diameter of 3.9 μ m was …

We compare the characteristics of GaSb quantum dots (QDs) grown by molecular beam
epitaxy on GaAs at temperatures from 400 to 490 C. The dot morphology, in terms of size …

This paper investigates the effects of Coulomb interactions on the emission dynamics of Sb-
containing quantum dot (QD) systems under high excitation densities. Two different type-II …

Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum
dot (QD)–In 0.15 Ga 0.85 As quantum well (QW) hybrid nanostructure are investigated using …