Comparative Study of Single and Double Gate All Around Cylindrical FET Structures for High-K Dielectric Materials
R Kaur, B Singh - Transactions on Electrical and Electronic Materials, 2021 - Springer
The performance of conventional MOSFET deteriorates because of the short channel effects
that appears when it is scaled into nm regime. The existing techniques like channel scaling …
that appears when it is scaled into nm regime. The existing techniques like channel scaling …