The nano ribbon FET (NR-FET) is an emerging device as multigate structure can be
designed on a single substrate, which leads to improvement in device performance …

This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …

Conventional biosensor designs are often vulnerable to issues like random dopant
fluctuations (RDFs) and high thermal budgets due to their design and the device they are …

With the continuous scaling down of semiconductor devices, traditional transistor
architectures face significant challenges in maintaining performance and power efficiency …

Most next-generation transistors are based on the concept of multi-gate structure. These
devices have to be designed with more number of gate insulator layers than the planar …

In this work we report a vertically stacked nanosheet Field Effect Transistor (NSFET) in
double gate configuration using transition metal dichalcogenide (TMD) based molybdenum …

The introduction of the twenty-first century has started to automate and digitize different
sectors to reduce human effort and ease day-to-day life. The recent advancement has …

In this study, a heterodielectric BOX (HDB) Nanoribbon FET (NR-FET) is built using the
TCAD device simulator to reduce the effect of trap charges on numerous electrical properties …

With the advancement of modern lifestyle, Smart Switchboards are becoming a new trend.
They not only provide remote switching, but also allow us to set schedules for automatically …