This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …

Gallium nitride (GaN) is a semiconductor used to make light emitting diodes, a technology
that could decrease global energy demands significantly if used worldwide. Yet there are …

Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm
diameter Si (111) substrates by using three different buffer layer configurations:(a) Thick …

We study the roles of graphene acting as a buffer layer for growth of an AlN film on a
sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth …

The three-dimensional imaging of threading dislocations in GaN films was demonstrated
using two-photon excitation photoluminescence. The threading dislocations were shown as …

High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure
without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25 μm …

The ability of in situ SiNx interlayers to lower the density of threading dislocations (TDs) has
been studied for the growth of c-plane (0001) GaN epilayers on sapphire by organometallic …

Homoepitaxial layers of AlN and heteroepitaxial layers of AlN on 4H-SiC substrates were
grown by metalorganic chemical vapor deposition at high temperatures up to 1400 C, and …

Strain relaxation in semiconductor heterostructures generally occurs through the motion of
dislocations that generates misfit dislocations above a critical thickness. However, majority …