We propose a high-frequency scalable electrical model of a through silicon via (TSV). The
proposed model includes not only the TSV, but also the bump and the redistribution layer …

Through-silicon vias (TSVs) in low, medium and high resistivity silicon for 3-D chip
integration and interposers are modeled and thoroughly characterized from 100 MHz to 130 …

Three-dimensional integration based on die/wafer stacking and through-silicon-vias (TSVs)
promises to overcome interconnect bottlenecks for nanoscale integrated circuits (ICs) …

This paper proposes an efficient method to model through-silicon via (TSV)
interconnections, an essential building block for the realization of silicon-based 3-D systems …

The integrity and reliability of signal transmission in glass 3-D integrated circuits (ICs) can be
improved by studying the effect of sidewall roughness of through-glass vias (TGVs) on …

In this paper, analytical, numerical-, and measurement-based methods for extracting the
resistance, inductance, capacitance, and conductance of through silicon vias (TSVs) are …

3-D integration presents a path to higher performance, greater density, increased
functionality and heterogeneous technology implementation. However, 3-D integration …

Major advances have been made in the processing technologies of through-silicon-vias
(TSVs) because TSV is an essential element for both wafer-level 3-D integration and …

BACKGROUND Integrated circuits (“ICs”) are incorporated into many electronic devices. IC
packaging has evolved, such that multiple ICs may be vertically stacked in so-called three …

Temperature-dependent investigations of circular and square coaxial through-silicon vias (C-
TSVs) are carried out in this paper, which can provide an effective solution to suppressing …