A new kinetic Monte Carlo algorithm that efficiently accounts for elastic strain is presented
and applied to study various phenomena that take place during heteroepitaxial growth. For …

We investigate morphological instability of heteroepitaxially grown thin films on vicinal
substrates with the phase-field-crystal (PFC) model. The PFC model is tuned to have a sharp …

Efficient algorithms for the simulation of strained heteroepitaxial growth with intermixing in
2+ 1 dimensions are presented. The first of these algorithms is an extension of the energy …

We use an island dynamics model for heteroepitaxial growth to study the narrowing and
sharpening of the island-size distribution as a function of the strain in the submonolayer …

The liquid phase heteroepitaxial growth on predefined crystalline substrate is studied with
binary phase field crystal (PFC) model. The purpose of this paper focuses on changes of the …

An epitaxial thin film consists of layers of atoms whose lattice properties are determined by
those of the underlying substrate. This paper reviews mathematical modeling, analysis and …

Molecular-Beam Epitaxy growth of multiple In0. 4Ga0. 6As layers on GaAs (311) A and
GaAs (331) A has been investigated by Atomic Force Microscopy and Photoluminescence …

Atomistic strain simulations based on the valence force field method are employed to study
the vertical arrangements of semiconductor quantum dot (QD) multilayers. The effects of the …

We propose an interlayer correlation of multilayer quantum-dot (QD) distributions from a
rigorous strain energy calculation. This leads to a map of correlations, or interlayer …

Strain analysis has significance both for tailoring material properties and designing
nanoscale devices. In particular, strain plays a vital role in engineering the growth …