Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

By addressing precursor prevalence and energetics using the DFT-based synthetic growth
concept (SGC), the formation mechanism of self-induced InAlN core–shell nanorods (NRs) …

Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and
theoretically modeled. The development of any functional electronics applications of h-AlN …

Amongst the piezoelectric thin films suited for microelectromechanical systems (MEMS), AlN
has gained particular technological relevance due to its unique material properties (large …

We report on the electrical characterization of Si-ion implanted AlN layers and the first
demonstration of metal–semiconductor field-effect transistors (MESFETs) with an ion …

Homoepitaxial layers of AlN and heteroepitaxial layers of AlN on 4H-SiC substrates were
grown by metalorganic chemical vapor deposition at high temperatures up to 1400 C, and …

Electron paramagnetic resonance studies of Si-doped Al x Ga 1− x N (0.79≤ x≤ 1.0) reveal
two Si negative-U (or DX) centers, which can be separately observed for x≥ 0.84. We found …

The adsorption of phosgene molecule on two kinds of AlN nanocones (AlN-Al and AlN-N)
was investigated based on the density functional theory calculations. It was found that the …

We have investigated gas-phase reactions driven by silane (SiH 4), which is the dopant
precursor in the metalorganic chemical vapor deposition (MOCVD) of aluminum nitride (AlN) …

The monolayer AlN is one of graphene-like 2D material. On the basis of density functional
theory (DFT) calculations, the adsorption of CO 2, CO, H 2, N 2, CH 4, O 2 and NO on the …