Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …

This study offers a comprehensive review of gallium oxide (Ga₂O₃)-based photodetectors,
emphasizing their applications in solar-blind UV detection and missile tracking systems …

Self-powered ultraviolet photodetectors with bipolar photoresponse have great potential in
the fields of ultraviolet optical communication, all-optical controlled artificial synapses, high …

Beta-gallium oxide (β-Ga 2 O 3)-based heterojunction photodetectors (HJPDs) based on pn
heterojunction have drawn a lot of attention since p-type doping of β-Ga 2 O 3 is challenging …

ε-Ga2O3 films with and without Zn impurity were epitaxially grown by metal organic chemical
vapor deposition on a c-plane sapphire substrate, and were then face-to-face annealed in …

A great deal of efforts have been dedicated to reduce carrier recombination problem in β-Ga
2 O 3 using strategies, such as doping, compositing, and interfacing with different materials …

A high‐performance self‐powered deep ultraviolet (DUV) photodetector based on the NiO/β‐
Ga2O3 heterojunction is fabricated and analyzed. The NiO/β‐Ga2O3 heterojunction …

We demonstrate herein a novel ferroelectric depolarization-field (E dp)-enhanced
Ag/ZnO/Si: Ga2O3/BFMO/FTO multijunction photodetector, which delivers ultrahigh self …

Self-powered solar-blind detectors have important potential applications in military and civil
fields, but their low responsivity and slow response speed limit their practical applications …

The rising demand for heterojunction materials stimulated by the great achievements of
modern nanotechnology has triggered enormous interests in the investigation of their …