[图书][B] Optical spectroscopy of semiconductor nanostructures

EL Ivchenko - 2005 - books.google.com
Page 1 Optical Spectroscopy of Semiconductor Nanostructures Eougenious L. Ivchenko a Alpha
Science Page 2 Page 3 OPTICAL SPECTROSCOPY OF SEMICONDUCTOR …

Epitaxial growth and optical properties of semiconductor quantum wires

XL Wang, V Voliotis - Journal of applied physics, 2006 - pubs.aip.org
In this paper we present a review on major advances achieved over the past ten years in the
field of fabrication of semiconductor quantum wires (QWRs) using epitaxial growth …

Local disorder and optical properties in V-shaped quantum wires: Toward one-dimensional exciton systems

T Guillet, R Grousson, V Voliotis, XL Wang, M Ogura - Physical Review B, 2003 - APS
The exciton localization is studied in GaAs/GaAlAs V-shaped quantum wires (QWR's) by
high spatial resolution spectroscopy. Scanning optical imaging of different generations of …

Energy spectrum analysis of a realistic single-electron Ga1− xAlxAs/GaAs/Ga1− xAlxAs quantum V-groove in external electric field

E Giraldo-Tobón, W Ospina, GL Miranda… - Physica E: Low …, 2019 - Elsevier
A study of the evolution of the eigenstates of a conduction band electron confined in a
GaAs/Ga 1− x AsAl x V-groove quantum wire under an electric field was carried out. The …

Synthesis and characterization of a new layered aluminophosphate templated with 1, 3-diaminopropane:[H 3 N (CH 2) 3 NH 3] 0.5 [AlPO 4 (OH)(OH 2)]· H 2 O

K Maeda, A Tuel, C Baerlocher - Journal of the Chemical Society …, 2000 - pubs.rsc.org
A new layered aluminophosphate has been synthesized hydrothermally in the presence of
1, 3-diaminopropane and its structure solved from X-ray powder diffraction data. The …

Surface structure of GaAs (2 5 11)

L Geelhaar, Y Temko, J Márquez, P Kratzer, K Jacobi - Physical Review B, 2002 - APS
GaAs samples with orientations vicinal to (2 5 11) within 1 were prepared by molecular
beam epitaxy and analyzed in situ by scanning tunneling microscopy, low-energy electron …

Reduction of nonradiative recombination centers in V-grooved AlGaAs/GaAs quantum wires grown using tertiarybutylarsine

XQ Liu, XL Wang, M Ogura - Applied Physics Letters, 2001 - pubs.aip.org
We report our comparative study on the luminescence recombination processes of V-
grooved AlGaAs/GaAs quantum wires (QWRs) grown using tertiarybutylarsine (TBAs) and …

Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source

XL Wang, M Ogura - Journal of crystal growth, 2000 - Elsevier
We report the first successful growth of high-quality V-shaped AlGaAs/GaAs quantum wires
(QWRs) using tertiarybutylarsine (TBAs) as the arsenic source by flow rate modulated …

Integrated architecture for the electrical detection of plasmonic resonances based on high electron mobility photo-transistors

D Sammito, D De Salvador, P Zilio, G Biasiol… - Nanoscale, 2014 - pubs.rsc.org
We report the design of an integrated platform for on-chip electrical transduction of the
surface plasmon resonance supported by a nanostructured metal grating. The latter is …

Modification of optical properties by strain-induced piezoelectric effects in ultrahigh-quality V-groove AlGaAs/GaAs single quantum wire

XQ Liu, XL Wang, M Ogura, T Guillet, V Voliotis… - Applied physics …, 2002 - pubs.aip.org
We report tiny strain-induced piezoelectric effects in an ultrahigh-quality AlGaAs/GaAs V-
groove quantum wire structure. Zero photoluminescence excitation (PLE) absorption …