We demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on
sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well …

GaN/AlGaN multiple quantum wells (MQWs) are grown on a 201 ð Þ-oriented b-Ga2O3
substrate. The optical and structural characteristics of the MQW structure are compared with …

Nanodiamonds containing silicon‐vacancy centers (SiV‐NDs) are attracting attention as
promising fluorescent markers. Recently, the preparation of single‐digit‐nanometer‐sized …

AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal
organic chemical vapor deposition. The grains are observed to have strong excitonic …

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple
quantum wells. Emission peaks due to recombination of the photogenerated carriers …

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-
based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra …

The interplay between growth and design parameters of GaSb-based quantum-well
semiconductor saturable absorber mirrors (SESAMs) and their corresponding absorption …

Despite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance
of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs …

The near-band-edge (NBE) photoluminescence (PL) of AlGaN layers with different Al
content was analyzed in a wide range of excitation intensities and temperatures. The PL …

We demonstrate an optically pumped single-photon emitter operating at room temperature
based on disk-shaped GaN/AlN quantum dots embedded in the nanowire (dot-in-wire) …