Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
SH Ryu - US Patent 6,979,863, 2005 - Google Patents
Silicon carbide semiconductor devices and methods of fab ricating Silicon carbide
Semiconductor devices have a Silicon carbide DMOSFET and an integral silicon carbide …
Semiconductor devices have a Silicon carbide DMOSFET and an integral silicon carbide …
MOSFET devices and methods of making
KS Matocha, SD Arthur, R Rao, PA Losee… - US Patent …, 2010 - Google Patents
BACKGROUND The invention relates generally to semiconductor devices and methods of
making, more particularly, the invention relates to MOSFET devices and methods of making …
making, more particularly, the invention relates to MOSFET devices and methods of making …
Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
SH Ryu - US Patent 7,221,010, 2007 - Google Patents
Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an
n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer …
n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer …
Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
Q Zhang - US Patent 8,415,671, 2013 - Google Patents
3,439,189 A 4/1969 Petry 3,629,011 A 12/1971 Tohiet a1. 3,924,024 A 12/1975 Naber et a1.
4,160,920 A 7/1979 Courier de Mere 4,242,690 A 12/1980 Temple source/drain regions that …
4,160,920 A 7/1979 Courier de Mere 4,242,690 A 12/1980 Temple source/drain regions that …
High performance power module
MK Das, RJ Callanan, H Lin, JW Palmour - US Patent 9,640,617, 2017 - Google Patents
Int. Cl. The present disclosure relates to a power module that has a HOIL 29/6(2006.01)
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …
Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
SH Ryu - US Patent 7,074,643, 2006 - Google Patents
--SiC Substrate O buried silicon carbide region of a second conductivity type opposite to the
first conductivity type and a second conduc tivity type well region in a first conductivity type …
first conductivity type and a second conduc tivity type well region in a first conductivity type …
High power insulated gate bipolar transistors
(56) References Cited 6,104,043 A 8/2000 Hermansson et al. 6,107,142 A 8, 2000 Suvorov
et al. US PATENT DOCUMENTS 6,117,735 A 9, 2000 Ueno 6,121,633 A 9/2000 Singh et al …
et al. US PATENT DOCUMENTS 6,117,735 A 9, 2000 Ueno 6,121,633 A 9/2000 Singh et al …
Semiconductor devices with heterojunction barrier regions and methods of fabricating same
Q Zhang - US Patent 9,117,739, 2015 - Google Patents
4,945,394 4.946, 547 5,011,549 5,017,976 5,028,977 5,032,888 5,041,881 5,111,253
5,155.289 5,166,760 5,170,231 5,170,455 5,184,199 5, 192,987 5,200,022 5,210,051 …
5,155.289 5,166,760 5,170,231 5,170,455 5,184,199 5, 192,987 5,200,022 5,210,051 …
Semiconductor transistor with P type re-grown channel layer
The invention is a device for controlling conduction across a semiconductor body with a P
type channel layer between active semiconductor regions of the device and the controlling …
type channel layer between active semiconductor regions of the device and the controlling …