Colloquium: Topological band theory

A Bansil, H Lin, T Das - Reviews of Modern Physics, 2016 - APS
The first-principles band theory paradigm has been a key player not only in the process of
discovering new classes of topologically interesting materials, but also for identifying salient …

Nonmonotonically tunable Rashba spin-orbit coupling by multiple-band filling control in -based interfacial -electron gases

H Liang, L Cheng, L Wei, Z Luo, G Yu, C Zeng, Z Zhang - Physical Review B, 2015 - APS
Spin-orbit coupling (SOC) for d-electron gas can be substantially enriched compared with
the sp-electron gas due to the delicate ordering of the multiple d subbands. Here, we …

Mott variable-range hopping and weak antilocalization effect in heteroepitaxial NaIrO thin films

M Jenderka, J Barzola-Quiquia, Z Zhang, H Frenzel… - Physical Review B …, 2013 - APS
Iridate thin films are a prerequisite for any application utilizing their cooperative effects
resulting from the interplay of strong spin-orbit coupling and electronic correlations. Here …

In situ Magnetotransport Measurements in Ultrathin Bi Films: Evidence for Surface-Bulk Coherent Transport

M Aitani, T Hirahara, S Ichinokura, M Hanaduka… - Physical Review Letters, 2014 - APS
We performed in situ magnetotransport measurements on ultrathin Bi (111) films [4–30
bilayers (BLs), 16–120 Å thick] to elucidate the role of bulk or surface states in the transport …

Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents

M Kneiß, C Yang, J Barzola‐Quiquia… - Advanced Materials …, 2018 - Wiley Online Library
Transparent p‐type conductive γ‐CuI thin films typically exhibit unexpectedly high hole
mobilities in the range of 10 cm2 V− 1 s− 1 even when heavily textured. To explain this …

Thickness-dependent electronic transport through epitaxial nontrivial Bi quantum films

D Abdelbarey, J Koch, Z Mamiyev, C Tegenkamp… - Physical Review B, 2020 - APS
The magnetoconductance of Bi films grown epitaxially on Si (111) for a film thickness
between 10 and 100 bilayers (BL) was investigated at a temperature of T= 9 K in magnetic …

Controlling conductivity by quantum well states in ultrathin Bi (111) films

P Kröger, D Abdelbarey, M Siemens, D Lükermann… - Physical Review B, 2018 - APS
Epitaxial Bi (111) films were subject to many and partly even controversial studies on the
semimetal-semiconductor transition triggered by a robust quantum confinement. The …

Magnetoconductance in epitaxial bismuth quantum films: Beyond weak (anti) localization

D Abdelbarey, J Koch, P Kröger, P Yogi, C Tegenkamp… - Physical Review B, 2021 - APS
The complex behavior of magnetoconductance of Bi films grown epitaxially on Si (111) with
a thickness of 20–100 bilayers (BL) was measured at T= 9 K in magnetic fields up to B= 4 T …

Quantum transport in the surface states of epitaxial Bi (111) thin films

K Zhu, L Wu, X Gong, S Xiao, X Jin - Physical Review B, 2016 - APS
Although bulk Bi is a prototypical semimetal with a topologically trivial electronic band
structure, we show by various quantum transport measurements that epitaxial Bi (111) thin …

Growth of epitaxial Bi-films on vicinal Si (111)

D Lükermann, S Banyoudeh, C Brand, S Sologub… - Surface science, 2014 - Elsevier
Vicinal semi-metallic Bi-films are expected to reveal topologically protected edge states. In
this study the growth of Bi-multilayer structures on Si (557) substrates has been investigated …